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2N5157

Texas Instruments

2N5157 by Texas Instruments

2N5157 by Texas Instruments is a NPN BJT with max. collector-emitter voltage of 500V, ideal for power applications. Featuring a max. power dissipation of 100W and max. collector current of 3.5A, it operates up to 140°C making it suitable for high-power circuits in various industries.

Median Price

$17.385

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (In-Stock)

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Freelance Electronics

USA . 2 parts In-Stock

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$13.351

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Bristol Electronics

USA . 3 parts In-Stock

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$15.000

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American Microsemiconductor Inc.

USA . 2 parts In-Stock

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$19.770

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TEDSS.com

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$48.740

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Vyrian

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Digiode

USA . 2,264 parts In-Stock

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Electronic Expediters

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Mil-Aero Solutions, Inc.

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Lakeview Electronics

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Flip Electronics

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Electronics Depot

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ES Components

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R&J Components

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LittleDiode

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Prism Electronics

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Sunrise Surplus Inc.

USA . 2 parts In-Stock

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MISTER SPROCKETS

USA . 2 parts In-Stock

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Resion

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DF Sales Co.

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DF Sales Co.

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Distributors (Availability)

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Parana Technologies

USA . 1,041 parts In-Stock

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$1.384

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$2.098

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1,041

$1.384

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$2.098

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DigiPath Technology Company

USA . 572 parts In-Stock

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$1.524

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$1.402

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572

$1.524

$1.402

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ChromeModa Solutions

Germany . 5,063 parts In-Stock

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$1.555

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$1.275

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$1.555

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IDEA Electronic Components Group

UK . 532 parts In-Stock

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$1.555

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$1.400

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$1.555

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AZTECH Wire

Italy . 797 parts In-Stock

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$13.593

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Native Components

USA . 60 parts In-Stock

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$26.860

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One Stop Electronics

USA . 1,393 parts In-Stock

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$29.050

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Northwest PG Solutions

USA . 694 parts In-Stock

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$29.546

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$26.591

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Marpe Global Electronics

Taiwan . 7,898 parts In-Stock

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XL Components Corporation

Australia . 6,803 parts In-Stock

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Microchip USA

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QualityLine Systems

Poland . 4,663 parts In-Stock

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Corphita

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Glotronic Ltd.

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RTC Component Inc.

USA . 10 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the Texas Instruments 2N5157 Power Bipolar Junction Transistor. Manufactured by industry leader Texas Instruments, this NPN transistor offers unmatched quality and reliability for a wide range of applications. With a maximum power dissipation of 100W and a maximum collector-emitter voltage of 500V, this transistor provides exceptional performance in a compact, round package. Whether you're designing high-performance electronic devices or industrial machinery, the 2N5157 delivers the value and benefits you need to bring your projects to life. Trust Texas Instruments for superior quality and performance every time.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides excellent thermal conductivity, helping to dissipate heat efficiently and improve overall performance and reliability of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and low noise for various applications.

Configuration: SINGLE

Single configuration makes it easier to integrate into circuits and simplifies the design process, making this transistor a versatile choice for different electronic applications.

Maximum Power Dissipation (Abs): 100 W

With a high maximum power dissipation of 100 W, this transistor can handle demanding power requirements, making it suitable for high-power applications.

Maximum Collector-Emitter Voltage: 500 V

The high maximum collector-emitter voltage of 500 V allows this transistor to be used in voltage-sensitive applications, providing reliable performance in various circuit designs.

Maximum Collector Current (IC): 3.5 A

With a high maximum collector current of 3.5 A, this transistor can deliver sufficient current for many demanding applications, making it a reliable choice for various circuit designs.

Nominal Transition Frequency (fT): 5 MHz

The high nominal transition frequency of 5 MHz indicates the speed at which this transistor can switch on and off, making it suitable for high-frequency applications such as RF amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5157 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

500 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

140 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5157 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-245-6522, 5961002456522, 5961-00-421-6415, 5961004216415, 5961-00-181-0662, 5961001810662, 5961-00-162-7697, 5961001627697, 5961-00-493-5251, 5961004935251

NIIN

002456522, 004216415, 001810662, 001627697, 004935251

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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