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2N5190

Onsemi

2N5190 by Onsemi

The Onsemi 2N5190 is a NPN Power BJT with max. collector current of 4A and power dissipation of 40W. Ideal for switching applications, it has a min. DC current gain of 10 (hFE) and operates up to 140 °C. Its package style is flange mount with through-hole terminals, making it suitable for various electronic circuits.

Median Price

$2.500

Lifecycle Status

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38

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1k+

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TEDSS.com

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American Microsemiconductor Inc.

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Forefront Electronics and Design

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Bristol Electronics

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Corohmni

South Africa . 260 parts In-Stock

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Native Components

USA . 1,663 parts In-Stock

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Northwest PG Solutions

USA . 3,668 parts In-Stock

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IDEA Electronic Components Group

UK . 1,197 parts In-Stock

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Component Stockers USA

USA . 4,127 parts In-Stock

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MKK Technologies

India . 46 parts In-Stock

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DigiPath Technology Company

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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SupplyDigital Components

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Kulean Microsystems

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Kepictronics

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TANS Electronics

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Corphita

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Perfect Parts

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Parana Technologies

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Cyclops Electronics Ltd (Excess)

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UHIMA Technologies

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RTC Component Inc.

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Overview

Upgrade your power management systems with the 2N5190 by Onsemi, a high-quality Power Bipolar Junction Transistor designed for efficient switching applications. Manufactured by Onsemi, known for their superior products, this NPN transistor offers a maximum collector-emitter voltage of 40V and a maximum collector current of 4A, ensuring reliable performance. With a package style of flange mount and a rectangular shape, this transistor is easy to install and perfect for various power control applications. Experience enhanced power efficiency and performance with the 2N5190 by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for long-lasting performance.

Polarity or Channel Type: NPN

Suitable for general purpose switching applications.

Configuration: SINGLE

Simplified design for easy integration.

Transistor Application: SWITCHING

Optimized for efficient switching operations.

Package Shape: RECTANGULAR

Space-saving design for compact applications.

Terminal Form: THROUGH-HOLE

Easy to solder and mount onto circuit boards.

Maximum Power Dissipation (Abs): 40 W

Can handle high power levels without overheating.

Package Style (Meter): FLANGE MOUNT

Securely mounts onto surfaces for stability.

Minimum DC Current Gain (hFE): 10

Ensures reliable amplification of current.

Maximum Operating Temperature: 140 °C

Can operate in high temperature environments.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low voltage applications.

Transistor Element Material: SILICON

Highly reliable and widely used material for transistors.

Maximum Collector Current (IC): 4 A

Capable of handling high current loads.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability.

Terminal Position: SINGLE

Simplified connection for ease of use.

Peak Reflow Temperature °C: 235

Withstands high temperature soldering processes.

Nominal Transition Frequency (fT): 2 MHz

Suitable for high frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5190 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5190 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-00-127-1585, 5961001271585, 5961-01-169-4679, 5961011694679, 5961-14-328-8942, 5961143288942, 5961-01-163-2643, 5961011632643, 5961-00-401-3298, 5961004013298

NIIN

001271585, 011694679, 143288942, 011632643, 004013298

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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