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ST8812FP

STMicroelectronics

ST8812FP by STMicroelectronics

ST8812FP by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 36W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-power circuits with through-hole mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,368 parts In-Stock

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7,368

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Digiode

USA . 3,627 parts In-Stock

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3,627

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Anansix

USA . 348 parts In-Stock

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348

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,526 parts In-Stock

1+ parts

$1.636

100+ parts

-

1k+ parts

$1.472

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1,526

$1.636

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$1.472

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$2.110

100+ parts

$1.920

1k+ parts

$1.730

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-

1,000

$2.110

$1.920

$1.730

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MKK Technologies

India . 1,017 parts In-Stock

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$3.076

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1,017

$3.076

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DigiPath Technology Company

USA . 1,017 parts In-Stock

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$3.076

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1,017

$3.076

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AZTECH Wire

Italy . 565 parts In-Stock

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$12.530

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565

$12.530

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Component Stockers USA

USA . 469 parts In-Stock

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$99.990

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469

$99.990

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Corphita

USA . 2,901 parts In-Stock

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2,901

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Parana Technologies

USA . 1,761 parts In-Stock

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$1.956

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1,761

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$1.956

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Alle Elektronik GmbH

Germany . 1,109 parts In-Stock

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1,109

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Overview

Unlock the potential of your projects with the ST8812FP from STMicroelectronics, a trusted leader in semiconductor technology. This high-performance NPN transistor excels in switching applications, offering remarkable power handling and reliability. With its robust design and superior thermal performance, the ST8812FP is perfect for industrial controls, automotive solutions, and consumer electronics. Elevate your innovations with a component that seamlessly combines quality, efficiency, and value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and resistance to environmental factors, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching applications, providing ease of integration in various electronic circuits.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces space requirements on printed circuit boards.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can effectively control high power loads, enhancing efficiency in various electronic systems.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient layout on PCB, facilitating space optimization in electronic designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical connections, which is advantageous for applications requiring high reliability.

No. of Terminals: 3

With three terminals, this BJT can be easily integrated into most circuits while adhering to standard connection schematics.

Maximum Power Dissipation (Abs): 36 W

A maximum power dissipation of 36 W allows for effective handling of significant power levels, making it suitable for power-hungry applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style enhances thermal stability and provides a solid mounting option for industrial applications.

Minimum DC Current Gain (hFE): 4.5

A minimum DC current gain of 4.5 indicates efficient signal amplification capabilities, making it a good choice for signal processing tasks.

Maximum Operating Temperature: 150 °C

The ability to operate at a maximum temperature of 150 °C ensures reliability in high-temperature environments.

Maximum Collector-Emitter Voltage: 600 V

With a collector-emitter voltage rating of 600 V, this transistor can handle high voltage applications, providing versatility in usage.

Transistor Element Material: SILICON

Silicon is a widely accepted semiconductor material that enables stable performance, robustness, and cost-effectiveness.

Maximum Collector Current (IC): 7 A

The capability to support collector currents up to 7 A makes this BJT suitable for driving substantial loads.

Terminal Finish: TIN

The tin terminal finish enhances solderability, ensuring reliable connections in electronic assemblies.

Terminal Position: SINGLE

A single terminal position simplifies circuit layout and assembly processes, making it easier for manufacturers.

Case Connection: ISOLATED

Isolated case connections prevent electrical interference, improving performance in sensitive applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST8812FP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Minimum DC Current Gain (hFE):

4.5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ST8812FP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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