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STX117-AP

STMicroelectronics

STX117-AP by STMicroelectronics

STX117-AP by STMicroelectronics is a PNP Darlington BJT designed for efficient switching applications. It features a max power dissipation of 1.2W, a min DC current gain (hFE) of 500, and operates up to 150 °C. Its cylindrical package ensures reliable performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 9,400 parts In-Stock

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9,400

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Vyrian

USA . 7,371 parts In-Stock

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7,371

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Anansix

USA . 1,077 parts In-Stock

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1,077

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Digiode

USA . 779 parts In-Stock

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779

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J2 Sourcing AB

Sweden . 300 parts In-Stock

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,800 parts In-Stock

1+ parts

$1.640

100+ parts

-

1k+ parts

$1.476

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1,800

$1.640

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$1.476

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MKK Technologies

India . 1,022 parts In-Stock

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$3.085

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1,022

$3.085

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DigiPath Technology Company

USA . 1,022 parts In-Stock

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$3.085

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1,022

$3.085

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AZTECH Wire

Italy . 1,016 parts In-Stock

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$20.870

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1,016

$20.870

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Component Stockers USA

USA . 680 parts In-Stock

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$99.990

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680

$99.990

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Corphita

USA . 3,500 parts In-Stock

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3,500

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Alle Elektronik GmbH

Germany . 1,200 parts In-Stock

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1,200

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Parana Technologies

USA . 1,130 parts In-Stock

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$1.961

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1,130

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$1.961

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Overview

Elevate your projects with the STX117-AP from STMicroelectronics, a powerhouse in power transistors! This high-quality PNP Darlington configuration ensures exceptional switching performance, backed by ST's industry-leading expertise. With efficient thermal management and robust construction, it thrives in demanding environments, making it ideal for automotive, industrial, and consumer applications. Trust in STMicroelectronics for reliability and innovation that drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and protection from environmental factors, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for efficient control of current flow in a complementary circuit design, enhancing performance in switching applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration increases current gain, while the built-in diode and resistor improve circuit stability and reduce external component requirements.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor enables quick on-off functionality, essential for modern electronic designs.

Package Shape: ROUND

The round package shape allows for efficient use of space, making it easy to integrate into compact circuit designs.

Terminal Form: WIRE

Wire terminals provide flexible connection options, allowing for easier installation and adaptability in various setups.

No. of Terminals: 3

With three terminals, this transistor can provide versatile circuit configurations while maintaining simplicity in design.

Maximum Power Dissipation (Abs): 1.2 W

The high power dissipation rating ensures that the transistor can handle significant loads without overheating, enhancing reliability in prolonged use.

Package Style (Meter): CYLINDRICAL

The cylindrical package style helps in maintaining a consistent mechanical and thermal profile, beneficial for heat dissipation.

Minimum DC Current Gain (hFE): 500

A minimum current gain of 500 demonstrates efficient amplification, making it suitable for applications requiring high performance.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows the transistor to function reliably in harsh conditions, increasing its versatility.

Maximum Collector-Emitter Voltage: 100 V

The ability to withstand up to 100 V ensures compatibility with a wide range of applications, from low to moderate-voltage systems.

Transistor Element Material: SILICON

Silicon as the element material is well-known for its excellent semiconductor properties, contributing to the transistor's performance and durability.

Maximum Collector Current (IC): 2 A

Supporting a maximum collector current of 2 A ensures that this transistor can operate effectively in demanding applications without risk of failure.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and reduces oxidation, ensuring reliable electrical connections.

Terminal Position: BOTTOM

Bottom-positioned terminals facilitate efficient layout in PCB designs, optimizing space and improving circuit performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STX117-AP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 0.0067

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STX117-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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