Loading...

STX13005G

STMicroelectronics

STX13005G by STMicroelectronics

STX13005G by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 3A. It has a min. DC current gain of 8, suitable for switching applications with a max. power dissipation of 2.8W in cylindrical package style for through-hole mounting at up to 150°C operating temperature.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,850 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,850

-

-

-

-

Anansix

USA . 2,449 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,449

-

-

-

-

Digiode

USA . 641 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

641

-

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,149 parts In-Stock

1+ parts

$0.373

100+ parts

-

1k+ parts

$0.335

10k+ parts

-

2,149

$0.373

-

$0.335

-

Aztec Data Supply Inc.

USA . 3,940 parts In-Stock

1+ parts

$0.486

100+ parts

-

1k+ parts

-

10k+ parts

-

3,940

$0.486

-

-

-

MKK Technologies

India . 1,829 parts In-Stock

1+ parts

$0.701

100+ parts

-

1k+ parts

-

10k+ parts

-

1,829

$0.701

-

-

-

DigiPath Technology Company

USA . 1,829 parts In-Stock

1+ parts

$0.701

100+ parts

-

1k+ parts

-

10k+ parts

-

1,829

$0.701

-

-

-

Corohmni

South Africa . 134 parts In-Stock

1+ parts

$1.442

100+ parts

-

1k+ parts

-

10k+ parts

-

134

$1.442

-

-

-

Ampacity Inc.

Singapore . 1,013 parts In-Stock

1+ parts

$3.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,013

$3.050

-

-

-

AZTECH Wire

Italy . 630 parts In-Stock

1+ parts

$11.038

100+ parts

-

1k+ parts

-

10k+ parts

-

630

$11.038

-

-

-

Component Stockers USA

USA . 348 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

348

$99.990

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

Continental Prestige Electronics

USA . 5,602 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,602

-

-

-

-

Alle Elektronik GmbH

Germany . 4,473 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,473

-

-

-

-

Argo Parts USA

USA . 2,387 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,387

-

-

-

-

Corphita

USA . 2,155 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,155

-

-

-

-

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Parana Technologies

USA . 1,323 parts In-Stock

1+ parts

-

100+ parts

$0.446

1k+ parts

-

10k+ parts

-

1,323

-

$0.446

-

-

Perfect Parts

USA . 377 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

377

-

-

-

-

Overview

Enhance your electronics projects with the STX13005G by STMicroelectronics, a top-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by industry leader STMicroelectronics, this NPN transistor offers unparalleled performance and reliability. Its high power dissipation, low DC current gain, and impressive collector-emitter voltage make it ideal for various commercial and industrial uses. Upgrade your designs with the STX13005G and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight, durable, and cost-effective.

Polarity or Channel Type: NPN

NPN polarity ensures that this transistor allows current to flow from the collector to the emitter, making it suitable for various circuit applications.

Configuration: SINGLE

The single configuration simplifies circuit design and implementation, making it easier to use in various projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly turn on and off, making it ideal for power control tasks.

Package Shape: ROUND

The round package shape allows for easy mounting on PCBs and provides efficient thermal dissipation.

Terminal Form: THROUGH-HOLE

The through-hole terminal form facilitates easy soldering onto PCBs, ensuring a secure and reliable connection.

No. of Terminals: 3

With three terminals, this transistor can be easily integrated into standard circuit designs, offering flexibility and compatibility.

Maximum Power Dissipation (Abs): 2.8 W

The high maximum power dissipation rating of 2.8W allows the transistor to handle significant power loads without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and space-saving design, making it suitable for applications with limited space.

Minimum DC Current Gain (hFE): 8

With a minimum DC current gain of 8, this transistor provides consistent and reliable amplification of input signals.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures stable and reliable performance even in harsh environmental conditions.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage rating of 400V allows for safe operation in high voltage applications.

Transistor Element Material: SILICON

Silicon material ensures high switching speed, low power consumption, and reliable performance of the transistor.

Maximum Collector Current (IC): 3 A

The maximum collector current rating of 3A enables the transistor to handle high current loads with ease.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals provides good solderability and corrosion resistance, ensuring a long-lasting connection.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and assembly, making it convenient to integrate into electronic systems.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STX13005G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STX13005G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 4