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STX112-AP

STMicroelectronics

STX112-AP by STMicroelectronics

STX112-AP by STMicroelectronics is a high-performance NPN Darlington BJT designed for switching applications. It features a max power dissipation of 1.2W, a min DC current gain (hFE) of 500, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,199 parts In-Stock

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5,199

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Digiode

USA . 1,199 parts In-Stock

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1,199

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Anansix

USA . 856 parts In-Stock

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856

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,963 parts In-Stock

1+ parts

$0.814

100+ parts

-

1k+ parts

$0.733

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1,963

$0.814

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$0.733

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MKK Technologies

India . 64 parts In-Stock

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$1.531

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64

$1.531

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DigiPath Technology Company

USA . 64 parts In-Stock

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$1.531

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64

$1.531

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AZTECH Wire

Italy . 912 parts In-Stock

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$8.250

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912

$8.250

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Ampacity Inc.

Singapore . 1,606 parts In-Stock

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$16.050

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1,606

$16.050

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QUARKTWIN TECHNOLOGY LTD

USA . 22,225 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,119 parts In-Stock

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4,119

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Parana Technologies

USA . 1,331 parts In-Stock

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$0.974

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1,331

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$0.974

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Corphita

USA . 804 parts In-Stock

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804

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Perfect Parts

USA . 4 parts In-Stock

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Overview

Elevate your projects with the STX112-AP from STMicroelectronics, a leader in innovative technology. This NPN Darlington transistor combines exceptional performance with reliability, perfect for efficient switching applications. With a robust design that ensures durability even at high temperatures, it empowers your circuits to operate seamlessly. Experience superior quality and value, backed by STMicroelectronics' commitment to excellence in powering the future.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and resistance to environmental factors, ensuring reliable performance.

Polarity or Channel Type: NPN

NPN configuration is widely used in various applications, making this transistor versatile for different circuit designs.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration allows for high current gain, making it suitable for low-power control applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor is ideal for power management and electronic control systems.

Package Shape: ROUND

The round shape facilitates easy integration into various circuit layouts, optimizing space in compact designs.

Terminal Form: WIRE

Wire terminal form ensures ease of soldering and good mechanical stability within electronic assemblies.

No. of Terminals: 3

Having three terminals allows for simplified connections while maintaining essential functionality for the transistor.

Maximum Power Dissipation (Abs): 1.2 W

With a maximum power dissipation of 1.2 W, the transistor can effectively handle substantial power levels without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical packaging offers a compact size, allowing for efficient use of space in electronic devices.

Minimum DC Current Gain (hFE): 500

A high current gain of 500 indicates excellent amplification capabilities, making this transistor efficient in low-signal applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C ensures reliable performance even in demanding thermal environments.

Maximum Collector-Emitter Voltage: 100 V

With a collector-emitter voltage rating of 100 V, this transistor can be used in a variety of high-voltage applications.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties, ensuring stable performance and durability.

Maximum Collector Current (IC): 2 A

A maximum collector current of 2 A allows this transistor to drive moderate loads effectively, making it suitable for diverse applications.

Terminal Finish: MATTE TIN

The matte tin finish provides good corrosion resistance and ensures reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient layout in printed circuit boards, maximizing space utilization.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STX112-AP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 0.0067

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STX112-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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