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STF826

STMicroelectronics

STF826 by STMicroelectronics

STF826 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max collector current of 3 A, a power dissipation of 1.4 W, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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ComSIT Distribution GmbH

Germany . 7,012 parts In-Stock

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7,012

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Vyrian

USA . 4,622 parts In-Stock

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4,622

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Anansix

USA . 1,413 parts In-Stock

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1,413

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Digiode

USA . 1,223 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,583 parts In-Stock

1+ parts

$0.649

100+ parts

-

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$0.584

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1,583

$0.649

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$0.584

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MKK Technologies

India . 1,539 parts In-Stock

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$1.220

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1,539

$1.220

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DigiPath Technology Company

USA . 1,539 parts In-Stock

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$1.220

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1,539

$1.220

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AZTECH Wire

Italy . 1,182 parts In-Stock

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$17.140

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$17.140

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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A-Z Elektronik GmbH

Germany . 7,011 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,743 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Perfect Parts

USA . 3,211 parts In-Stock

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Corphita

USA . 2,247 parts In-Stock

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Assy Fe

Spain . 2,000 parts In-Stock

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2,000

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Parana Technologies

USA . 1,497 parts In-Stock

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$0.776

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1,497

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$0.776

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Overview

Elevate your designs with the STF826 from STMicroelectronics, a reliable PNP power BJT that excels in switching applications. Renowned for its exceptional quality and performance, STMicroelectronics ensures that you receive unmatched reliability and efficiency. Ideal for various electronic projects, the STF826 supports robust operation at elevated temperatures while delivering impressive power handling capabilities. Trust in a leader to enhance your innovations!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers a balance of durability and lightweight characteristics, making it suitable for various applications.

Polarity or Channel Type: PNP

As a PNP transistor, this device allows for efficient switching and amplification in various circuit configurations, especially in common-emitter setups.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can rapidly change states, enhancing performance in digital and analog circuits.

Surface Mount: YES

The surface mount capability allows for compact and efficient PCB design, facilitating higher density circuit layouts and automated assembly.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on the circuit board and aligns well with modern layout designs.

Terminal Form: FLAT

Flat terminals provide efficient thermal and electrical contact, ensuring reliable performance in high-frequency and high-current applications.

No. of Terminals: 4

With four terminals, this transistor offers flexibility in connections, supporting various circuit configurations and simplified assembly.

Maximum Power Dissipation (Abs): 1.4 W

A maximum power dissipation of 1.4 W allows for efficient heat management, making this transistor suitable for moderate power applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style is conducive to compact design, reducing the overall footprint in applications where space is a premium.

Minimum DC Current Gain (hFE): 30

A minimum hFE of 30 ensures sufficient current gain for reliable amplification, making it effective for signal processing applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can operate in high-temperature environments, enhancing reliability in demanding applications.

Maximum Collector-Emitter Voltage: 30 V

A collector-emitter voltage rating of 30 V enables this transistor to handle moderate voltage applications, expanding its usability in various circuits.

Transistor Element Material: SILICON

Silicon as an element material offers great thermal stability and efficiency, contributing to the overall performance and reliability of the transistor.

Maximum Collector Current (IC): 3 A

The capability to handle a maximum collector current of 3 A allows this transistor to be used in higher power applications, making it versatile.

Terminal Position: DUAL

Dual terminal positions facilitate flexible PCB layouts, allowing for better routing and design options in complex circuits.

Case Connection: COLLECTOR

A collector case connection promotes efficient heat dissipation and stability in high-performance applications.

Nominal Transition Frequency (fT): 100 MHz

With a nominal transition frequency of 100 MHz, this transistor is well-suited for high-frequency applications, making it ideal for RF circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STF826 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STF826 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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