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STF817

STMicroelectronics

STF817 by STMicroelectronics

STF817 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max collector-emitter voltage of 80V, a power dissipation of 1.4W, and operates at up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,664 parts In-Stock

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4,664

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Vyrian

USA . 1,987 parts In-Stock

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1,987

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Anansix

USA . 903 parts In-Stock

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903

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,240 parts In-Stock

1+ parts

$1.275

100+ parts

-

1k+ parts

$1.148

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1,240

$1.275

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$1.148

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MKK Technologies

India . 1,007 parts In-Stock

1+ parts

$2.398

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1,007

$2.398

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DigiPath Technology Company

USA . 1,007 parts In-Stock

1+ parts

$2.398

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1,007

$2.398

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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A-Z Elektronik GmbH

Germany . 5,892 parts In-Stock

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5,892

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Corphita

USA . 4,614 parts In-Stock

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4,614

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Parana Technologies

USA . 2,146 parts In-Stock

1+ parts

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100+ parts

$1.525

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2,146

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$1.525

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Overview

Unlock the potential of your projects with the STF817 from STMicroelectronics, renowned for excellence in power solutions. This PNP transistor seamlessly combines reliability and efficiency, making it ideal for various switching applications. With superior thermal performance and a compact design, the STF817 enhances system responsiveness while ensuring durability. Experience the unmatched quality and innovation of STMicroelectronics—engineered to elevate your designs and deliver lasting value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides a lightweight and durable housing, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP type allows for efficient current flow control, suitable for a variety of circuit configurations.

Configuration: SINGLE

A single configuration simplifies circuit design and helps in reducing the overall footprint of the design.

Transistor Application: SWITCHING

Designed for switching applications, this transistor is highly effective for quick on/off control in electronic circuits.

Surface Mount: YES

Surface mount capability enables compact design and facilitates automated assembly processes, which saves time and reduces costs.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on PCBs, allowing for more efficient layouts.

Terminal Form: FLAT

Flat terminals provide better soldering contact, ensuring reliable connectivity in circuit assemblies.

No. of Terminals: 3

Having three terminals is standard for many applications, allowing for straightforward connection in most designs.

Maximum Power Dissipation (Abs): 1.4 W

With a maximum power dissipation of 1.4 W, this transistor can handle a reasonable amount of power, making it suitable for moderate power applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style aids in minimizing space on PCBs, which is ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 40

A minimum hFE of 40 indicates that this transistor can effectively amplify input signals, enhancing its usefulness in amplification circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature means that this product can perform reliably in demanding thermal environments.

Maximum Collector-Emitter Voltage: 80 V

A maximum collector-emitter voltage of 80 V allows this transistor to be used in high-voltage applications, broadening its range of use.

Transistor Element Material: SILICON

Silicon as a material provides good electrical properties, ensuring performance and reliability in various conditions.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current of 1.5 A, this transistor is well-suited for handling moderate current loads in switching applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish enhances solderability, facilitating easier assembly and ensuring a strong electrical connection.

Terminal Position: SINGLE

A single terminal position simplifies design considerations and helps in achieving a more streamlined PCB layout.

Nominal Transition Frequency (fT): 50 MHz

A nominal transition frequency of 50 MHz indicates that this transistor can support high-speed switching applications, making it versatile for modern electronics.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STF817 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STF817 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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