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STF817A

STMicroelectronics

STF817A by STMicroelectronics

STF817A by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.4W and collector current of 1.5A. It operates up to 150 °C with an 80V collector-emitter voltage. Ideal for compact electronic designs due to its small outline package.

Median Price

$0.394

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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DigiKey

USA . 99 parts In-Stock

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$0.394

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$0.394

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Digiode

USA . 4,899 parts In-Stock

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$1.539

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4,899

$1.539

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Vyrian

USA . 5,729 parts In-Stock

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5,729

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Anansix

USA . 2,775 parts In-Stock

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PC Components Company LLC

USA . 2,000 parts In-Stock

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2,000

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Ack Elektronik San.Tic.Ltd.Sti

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1,781

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Connector Distribution Corp

USA . 450 parts In-Stock

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Right Parts Inc.

USA . 450 parts In-Stock

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450

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Component Stockers USA

USA . 7,300 parts In-Stock

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$0.200

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$0.190

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$0.180

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$0.200

$0.190

$0.180

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IDEA Electronic Components Group

UK . 625 parts In-Stock

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$0.521

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$0.469

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625

$0.521

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$0.469

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MKK Technologies

India . 1,477 parts In-Stock

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$0.979

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DigiPath Technology Company

USA . 1,477 parts In-Stock

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$0.979

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Corphita

USA . 3,743 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,477 parts In-Stock

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Perfect Parts

USA . 5,752 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kepictronics

USA . 2,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 946 parts In-Stock

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Parana Technologies

USA . 135 parts In-Stock

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$0.623

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$0.623

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Microchip USA

USA . 107 parts In-Stock

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Overview

Unlock the power of efficiency with the STF817A from STMicroelectronics, a leader in innovative semiconductor solutions. This PNP power BJT is designed for seamless switching applications, ensuring reliable performance in compact devices. With its robust construction and high-temperature tolerance, the STF817A delivers exceptional value, enhancing your designs while reducing energy consumption. Elevate your projects with a trusted component that combines quality, reliability, and superior technical support – choose STF817A for unmatched performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection against environmental factors, making the transistor suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration in circuits requiring negative control signals, offering greater flexibility in design.

Configuration: SINGLE

Single configuration ensures simplicity in design and minimizes space usage in circuit layouts.

Transistor Application: SWITCHING

Ideal for switching applications, this BJT can efficiently control the flow of current, enhancing performance in digital circuits.

Surface Mount: YES

Surface mount capability enables compact design, facilitating high-density PCB layouts and automated assembly.

Package Shape: RECTANGULAR

Rectangular packages are standardized, providing easier handling and placement during manufacturing.

Terminal Form: FLAT

Flat terminals provide a stable and reliable connection, reducing the risk of failures due to mechanical stress.

No. of Terminals: 4

With four terminals, this transistor supports more complex circuit implementations and provides additional design flexibility.

Maximum Power Dissipation (Abs): 1.4 W

A maximum power dissipation of 1.4 W allows this transistor to handle significant power, making it suitable for varied applications.

Package Style (Meter): SMALL OUTLINE

The small outline design helps save space on PCBs, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 30

A minimum gain of 30 provides robust amplification capabilities, ensuring effective signal processing.

Maximum Operating Temperature: 150 °C

Operating at high temperatures ensures reliability and performance in demanding environments, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 80 V

With a high voltage tolerance, this BJT can be used in applications that require the management of larger signals.

Transistor Element Material: SILICON

Silicon as a base material offers excellent semiconductor properties, ensuring efficient operation across a range of conditions.

Maximum Collector Current (IC): 1.5 A

The ability to handle up to 1.5 A makes this transistor suitable for various power applications, including motor control and drive circuits.

Terminal Finish: Matte Tin (Sn)

Matte tin provides good solderability and protects against oxidation, ensuring reliable long-term performance.

Terminal Position: DUAL

A dual terminal position enhances layout flexibility, improving integration in compact designs.

Case Connection: COLLECTOR

The case connection being collector optimizes heat dissipation and ensures stable operation under load.

Maximum Time At Peak Reflow Temperature (s): 30

A peak reflow time of 30 seconds helps ensure consistent soldering quality during the manufacturing process.

Peak Reflow Temperature °C: 260

This high peak reflow temperature enables compatibility with modern SMT processes, ensuring ease of integration into assemblies.

Nominal Transition Frequency (fT): 50 MHz

A transition frequency of 50 MHz makes this BJT suitable for high-speed applications, enhancing overall circuit performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STF817A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STF817A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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