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BUL704

STMicroelectronics

BUL704 by STMicroelectronics

BUL704 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

Median Price

$1.390

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 998 parts In-Stock

1+ parts

$1.390

100+ parts

$0.583

1k+ parts

$0.455

10k+ parts

-

998

$1.390

$0.583

$0.455

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,417 parts In-Stock

1+ parts

$1.320

100+ parts

-

1k+ parts

-

10k+ parts

-

3,417

$1.320

-

-

-

Vyrian

USA . 4,020 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,020

-

-

-

-

Anansix

USA . 2,530 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,530

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 412 parts In-Stock

1+ parts

$0.477

100+ parts

-

1k+ parts

$0.430

10k+ parts

-

412

$0.477

-

$0.430

-

MKK Technologies

India . 2,248 parts In-Stock

1+ parts

$0.898

100+ parts

-

1k+ parts

-

10k+ parts

-

2,248

$0.898

-

-

-

DigiPath Technology Company

USA . 2,248 parts In-Stock

1+ parts

$0.898

100+ parts

-

1k+ parts

-

10k+ parts

-

2,248

$0.898

-

-

-

Ampacity Inc.

Singapore . 554 parts In-Stock

1+ parts

$1.180

100+ parts

-

1k+ parts

-

10k+ parts

-

554

$1.180

-

-

-

Corphita

USA . 3,374 parts In-Stock

1+ parts

$1.251

100+ parts

-

1k+ parts

-

10k+ parts

-

3,374

$1.251

-

-

-

Microchip USA

USA . 179 parts In-Stock

1+ parts

$5.460

100+ parts

-

1k+ parts

-

10k+ parts

-

179

$5.460

-

-

-

Perfect Parts

USA . 3,216 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,216

-

-

-

-

Parana Technologies

USA . 1,466 parts In-Stock

1+ parts

-

100+ parts

$0.571

1k+ parts

-

10k+ parts

-

1,466

-

$0.571

-

-

Alle Elektronik GmbH

Germany . 998 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

998

-

-

-

-

Native Components

USA . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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200

-

-

-

-

Northwest PG Solutions

USA . 82 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

82

-

-

-

-

Overview

Unlock powerful performance with the BUL704 from STMicroelectronics, a leader in innovation and reliability. This NPN power transistor is engineered for efficient switching applications, ensuring that your designs deliver exceptional performance under demanding conditions. With its robust construction and high power dissipation capability, the BUL704 is perfect for industrial automation, automotive systems, and more, providing unmatched value and reliability for your projects. Choose STMicroelectronics for quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material provides excellent protection against environmental factors, ensuring the transistor's reliability and longevity.

Polarity or Channel Type: NPN

NPN transistors are typically preferred for switching applications due to their higher efficiency and ability to handle larger loads.

Configuration: SINGLE

Single configuration allows for easier integration into various circuits, making it suitable for compact designs.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor can handle rapid on/off changes, ideal for power control in circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package facilitates easy mounting and integration into standard PCBs.

Terminal Form: THROUGH-HOLE

Through-hole terminal form ensures secure connections and better mechanical stability in electronic assemblies.

No. of Terminals: 3

The three terminals provide necessary connections for input, output, and ground, simplifying circuit design.

Maximum Power Dissipation (Abs): 70 W

A high power dissipation rating means this BJT can handle significant power without overheating, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides a secure and reliable mounting option, enhancing thermal dissipation and mechanical stability.

Minimum DC Current Gain (hFE): 14

A minimum hFE of 14 ensures adequate amplification for various applications, enhancing circuit performance.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows for use in extreme environments without risking failure.

Maximum Collector-Emitter Voltage: 400 V

With a voltage rating of 400 V, this BJT can be used in high-voltage applications, providing versatility in design.

Transistor Element Material: SILICON

Silicon material provides excellent thermal stability and overall performance in semiconductor devices.

Maximum Collector Current (IC): 4 A

A maximum collector current of 4 A supports higher load applications, making it ideal for power electronics.

Terminal Finish: Matte Tin (Sn)

Matte tin finish improves solderability and enhances the overall durability of the terminal connections.

Terminal Position: SINGLE

Single terminal position simplifies layout design on PCBs, allowing for efficient use of space.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL704 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

14

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL704 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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