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BUL743

STMicroelectronics

BUL743 by STMicroelectronics

BUL743 by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 100 W, a collector-emitter voltage of 500 V, and operates up to 150 °C. Ideal for high-power circuits, it ensures reliable performance in demanding environments.

Median Price

$0.668

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,149 parts In-Stock

1+ parts

$2.730

100+ parts

$1.214

1k+ parts

$0.902

10k+ parts

$0.807

1,149

$2.730

$1.214

$0.902

$0.807

Arrow

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.668

10k+ parts

$0.651

8,000

-

-

$0.668

$0.651

Verical

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.668

10k+ parts

$0.651

8,000

-

-

$0.668

$0.651

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,891 parts In-Stock

1+ parts

$0.526

100+ parts

-

1k+ parts

-

10k+ parts

-

4,891

$0.526

-

-

-

Digiode

USA . 1,328 parts In-Stock

1+ parts

$1.976

100+ parts

-

1k+ parts

-

10k+ parts

-

1,328

$1.976

-

-

-

TME

Poland . 965 parts In-Stock

1+ parts

$2.600

100+ parts

$1.170

1k+ parts

$0.940

10k+ parts

-

965

$2.600

$1.170

$0.940

-

Chip Stock

USA . 3,075 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,075

-

-

-

-

Anansix

USA . 912 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

912

-

-

-

-

Bristol Electronics

USA . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$0.851

100+ parts

$0.774

1k+ parts

$0.698

10k+ parts

-

270

$0.851

$0.774

$0.698

-

IDEA Electronic Components Group

UK . 1,591 parts In-Stock

1+ parts

$1.374

100+ parts

-

1k+ parts

$1.237

10k+ parts

-

1,591

$1.374

-

$1.237

-

Corphita

USA . 825 parts In-Stock

1+ parts

$1.872

100+ parts

-

1k+ parts

-

10k+ parts

-

825

$1.872

-

-

-

Component Stockers USA

USA . 8,070 parts In-Stock

1+ parts

$2.030

100+ parts

$1.340

1k+ parts

$0.960

10k+ parts

-

8,070

$2.030

$1.340

$0.960

-

MKK Technologies

India . 2,248 parts In-Stock

1+ parts

$2.585

100+ parts

-

1k+ parts

-

10k+ parts

-

2,248

$2.585

-

-

-

DigiPath Technology Company

USA . 2,248 parts In-Stock

1+ parts

$2.585

100+ parts

-

1k+ parts

-

10k+ parts

-

2,248

$2.585

-

-

-

Microchip USA

USA . 7,418 parts In-Stock

1+ parts

$14.235

100+ parts

-

1k+ parts

-

10k+ parts

-

7,418

$14.235

-

-

-

Perfect Parts

USA . 8,444 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,444

-

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Parana Technologies

USA . 1,068 parts In-Stock

1+ parts

-

100+ parts

$1.643

1k+ parts

-

10k+ parts

-

1,068

-

$1.643

-

-

Native Components

USA . 473 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$4.093

10k+ parts

-

473

-

-

$4.093

-

Northwest PG Solutions

USA . 220 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$4.136

10k+ parts

-

220

-

-

$4.136

-

Overview

Elevate your projects with the BUL743 from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This robust NPN power transistor excels in switching applications, delivering exceptional reliability and performance. With its impressive power dissipation capabilities and high collector current, the BUL743 ensures efficient operation in demanding environments. Choose STMicroelectronics for quality you can depend on, enhancing your designs with unmatched value and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

Being an NPN transistor allows for fast switching speeds and the ability to control larger currents, making it ideal for switching applications.

Configuration: SINGLE

A single configuration simplifies circuit design while maintaining effective performance in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, it provides reliable performance in tasks like signal amplification and digital circuits.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient PCB layout and compatibility with various mounting systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals enhance mechanical stability and make soldering easier, ensuring reliable electrical connections.

No. of Terminals: 3

With three terminals, it is simplified for circuit configuration, allowing versatile usage in various applications.

Maximum Power Dissipation (Abs): 100 W

A maximum power dissipation of 100 W allows it to handle high power levels without overheating, increasing reliability and longevity.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides robust physical support, making it easier to install securely in electronic devices.

Minimum DC Current Gain (hFE): 24

A minimum DC current gain of 24 ensures adequate amplification, suitable for driving loads efficiently.

Maximum Operating Temperature: 150 °C

High maximum operating temperature confirms that the transistor can function reliably in demanding environments.

Maximum Collector-Emitter Voltage: 500 V

With a maximum collector-emitter voltage of 500 V, this transistor is capable of handling high voltage applications.

Transistor Element Material: SILICON

Silicon as the material provides good thermal stability and reliable performance across a wide range of applications.

Maximum Collector Current (IC): 12 A

A maximum collector current of 12 A enables it to support robust applications, enhancing its versatility in various circuits.

Terminal Position: SINGLE

Single terminal positioning simplifies connectivity and reduces layout complexity on circuit boards.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL743 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

500 V

Configuration:

Minimum DC Current Gain (hFE):

24

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL743 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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