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BUL741FP

STMicroelectronics

BUL741FP by STMicroelectronics

BUL741FP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 60W, a collector-emitter voltage of 400V, and operates up to 150 °C. Ideal for high-power circuits with through-hole mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,696 parts In-Stock

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6,696

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Digiode

USA . 3,315 parts In-Stock

1+ parts

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3,315

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Anansix

USA . 674 parts In-Stock

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674

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,243 parts In-Stock

1+ parts

$0.696

100+ parts

-

1k+ parts

$0.627

10k+ parts

-

1,243

$0.696

-

$0.627

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MKK Technologies

India . 2,184 parts In-Stock

1+ parts

$1.310

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-

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2,184

$1.310

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DigiPath Technology Company

USA . 2,184 parts In-Stock

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$1.310

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-

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2,184

$1.310

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Corohmni

South Africa . 403 parts In-Stock

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$1.545

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403

$1.545

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$2.214

100+ parts

$2.015

1k+ parts

$1.815

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-

3,000

$2.214

$2.015

$1.815

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AZTECH Wire

Italy . 223 parts In-Stock

1+ parts

$12.550

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223

$12.550

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Component Stockers USA

USA . 683 parts In-Stock

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$99.990

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683

$99.990

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Alle Elektronik GmbH

Germany . 3,359 parts In-Stock

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3,359

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Corphita

USA . 3,304 parts In-Stock

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3,304

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Northwest PG Solutions

USA . 1,470 parts In-Stock

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1,470

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Perfect Parts

USA . 642 parts In-Stock

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642

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Parana Technologies

USA . 471 parts In-Stock

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$0.833

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471

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$0.833

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Native Components

USA . 200 parts In-Stock

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200

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Overview

Unlock the potential of your electronic designs with the BUL741FP from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This powerful NPN transistor excels in switching applications, delivering reliable performance under demanding conditions. With its robust construction and superior thermal management, the BUL741FP ensures longevity and efficiency in various applications—from consumer electronics to industrial automation—empowering you to create smarter, more efficient systems. Experience quality backed by industry expertise!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides excellent protection against environmental factors, making the transistor durable and reliable in various applications.

Polarity or Channel Type: NPN

The NPN configuration is ideal for switching and amplification applications, offering advantages in terms of speed and efficiency.

Configuration: SINGLE

A single configuration simplifies integration into circuits, making it an easy choice for various designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures rapid on/off operation, which is essential for efficient electronic control.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCBs and allows for better thermal management in compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and are great for applications requiring durable connections.

No. of Terminals: 3

Having three terminals simplifies circuit design and connectivity, making assembly straightforward.

Maximum Power Dissipation (Abs): 60 W

With a high maximum power dissipation, this transistor can handle substantial loads without overheating, enhancing reliability.

Package Style (Meter): FLANGE MOUNT

The flange mount style ensures secure attachment and aids in effective heat dissipation, crucial for high-power applications.

Minimum DC Current Gain (hFE): 25

A minimum hFE of 25 means this transistor can effectively amplify weak signals, making it a good choice for audio and radio frequency applications.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures increases versatility, allowing usage in demanding environments without performance degradation.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage provides the capacity for handling demanding applications, such as in power supplies and motor controls.

Transistor Element Material: SILICON

Silicon transistors are known for their efficiency and broad availability, making them a standard choice in electronics.

Maximum Collector Current (IC): 2.5 A

With a maximum collector current of 2.5 A, this transistor is capable of driving significant loads, suitable for a variety of power applications.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and protects against oxidation, ensuring reliable electrical connections.

Terminal Position: SINGLE

A single terminal position streamlines the design process and aids in systematic layouts in circuit boards.

Case Connection: ISOLATED

An isolated case connection prevents interaction with circuit ground, providing safer and more versatile integration into designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL741FP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL741FP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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