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BUL742

STMicroelectronics

BUL742 by STMicroelectronics

BUL742 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-performance electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,942 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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2,942

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Digiode

USA . 2,572 parts In-Stock

1+ parts

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1k+ parts

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2,572

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Electronic Expediters

USA . 2,000 parts In-Stock

1+ parts

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2,000

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-

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Anansix

USA . 1,059 parts In-Stock

1+ parts

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1,059

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,701 parts In-Stock

1+ parts

$1.345

100+ parts

-

1k+ parts

$1.211

10k+ parts

-

1,701

$1.345

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$1.211

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MKK Technologies

India . 1,218 parts In-Stock

1+ parts

$2.529

100+ parts

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1,218

$2.529

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DigiPath Technology Company

USA . 1,218 parts In-Stock

1+ parts

$2.529

100+ parts

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1,218

$2.529

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Assy Fe

Spain . 3,373 parts In-Stock

1+ parts

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3,373

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Alle Elektronik GmbH

Germany . 3,349 parts In-Stock

1+ parts

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3,349

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Corphita

USA . 2,489 parts In-Stock

1+ parts

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2,489

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Northwest PG Solutions

USA . 2,124 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$3.402

10k+ parts

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2,124

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$3.402

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Parana Technologies

USA . 1,622 parts In-Stock

1+ parts

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100+ parts

$1.608

1k+ parts

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1,622

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$1.608

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Native Components

USA . 770 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$3.367

10k+ parts

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770

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$3.367

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Overview

Unlock exceptional performance with the BUL742 from STMicroelectronics, a trusted leader in power solutions. This robust NPN transistor excels in switching applications, delivering impressive efficiency in demanding environments. With a resilient design and a superior operating temperature range, it ensures reliability where it counts. Choose the BUL742 for quality you can depend on—transform your projects into powerful innovations that stand the test of time!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides excellent resistance to moisture and mechanical stress, ensuring reliability in various environments.

Polarity or Channel Type: NPN

NPN transistors are well-suited for high-speed switching applications, making this product efficient for various electronic circuits.

Configuration: SINGLE

The single configuration simplifies design and integration into circuits, making it easier to use for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high efficiency and fast response times, suitable for power control.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on printed circuit boards, making it an optimal choice for compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure a strong mechanical connection and are ideal for high-power applications, providing robustness to the assembly.

No. of Terminals: 3

With three terminals, this transistor is straightforward to integrate into various circuit designs while allowing for effective control over functionality.

Maximum Power Dissipation (Abs): 70 W

The high maximum power dissipation capability enables the transistor to handle significant loads without overheating, enhancing durability and performance.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for easy installation and stable mounting in electronic systems, contributing to the overall reliability of the device.

Minimum DC Current Gain (hFE): 10

A minimum DC current gain of 10 ensures that the transistor can amplify signals effectively, making it suitable for various applications requiring signal processing.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can perform reliably in high-temperature environments, making it ideal for demanding applications.

Maximum Collector-Emitter Voltage: 400 V

The ability to handle up to 400 V collector-emitter voltage makes this transistor robust for high voltage applications, ensuring it meets diverse industry requirements.

Transistor Element Material: SILICON

Silicon material provides excellent electrical characteristics and thermal stability, which contributes to improved performance and longevity of the transistor.

Maximum Collector Current (IC): 4 A

The capacity to handle a maximum collector current of 4 A makes this transistor suitable for high-power applications, enabling significant control over load management.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, enhancing the reliability of electrical connections in the assembly.

Terminal Position: SINGLE

Having a single terminal position simplifies circuit design and layout, making it easier for engineers to work with in prototype and production stages.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL742 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL742 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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