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BUL742C

STMicroelectronics

BUL742C by STMicroelectronics

BUL742C by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

Median Price

$0.926

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 124 parts In-Stock

1+ parts

$0.346

100+ parts

-

1k+ parts

-

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124

$0.346

-

-

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Chip1Stop

Japan . 284 parts In-Stock

1+ parts

$0.599

100+ parts

-

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-

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284

$0.599

-

-

-

Adafruit Industries

USA . 32 parts In-Stock

1+ parts

$1.252

100+ parts

$1.139

1k+ parts

$1.027

10k+ parts

-

32

$1.252

$1.139

$1.027

-

Mouser Electronics

USA . 1,037 parts In-Stock

1+ parts

$1.840

100+ parts

$0.694

1k+ parts

$0.582

10k+ parts

$0.449

1,037

$1.840

$0.694

$0.582

$0.449

DigiKey

USA . 573 parts In-Stock

1+ parts

$1.840

100+ parts

$0.787

1k+ parts

$0.570

10k+ parts

$0.468

573

$1.840

$0.787

$0.570

$0.468

Avnet

USA . 4,500 parts In-Stock

1+ parts

-

100+ parts

-

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4,500

-

-

-

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Verical

USA . 124 parts In-Stock

1+ parts

-

100+ parts

$0.346

1k+ parts

-

10k+ parts

-

124

-

$0.346

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 659 parts In-Stock

1+ parts

$0.287

100+ parts

-

1k+ parts

-

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-

659

$0.287

-

-

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Vyrian

USA . 4,057 parts In-Stock

1+ parts

$0.302

100+ parts

-

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-

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-

4,057

$0.302

-

-

-

Cyclops Electronics Ltd

UK . 123,906 parts In-Stock

1+ parts

-

100+ parts

-

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123,906

-

-

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Anansix

USA . 1,004 parts In-Stock

1+ parts

-

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1,004

-

-

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Zilex Electronics Inc.

Canada . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1,000

-

-

-

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IBS Electronics

USA . 600 parts In-Stock

1+ parts

-

100+ parts

$0.643

1k+ parts

$0.611

10k+ parts

$0.585

600

-

$0.643

$0.611

$0.585

Bristol Electronics

USA . 48 parts In-Stock

1+ parts

-

100+ parts

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48

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,778 parts In-Stock

1+ parts

$0.272

100+ parts

-

1k+ parts

-

10k+ parts

-

1,778

$0.272

-

-

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IDEA Electronic Components Group

UK . 48 parts In-Stock

1+ parts

$0.773

100+ parts

-

1k+ parts

$0.696

10k+ parts

-

48

$0.773

-

$0.696

-

Corohmni

South Africa . 251 parts In-Stock

1+ parts

$1.148

100+ parts

-

1k+ parts

-

10k+ parts

-

251

$1.148

-

-

-

Advanced Electronics

New Zealand . 32 parts In-Stock

1+ parts

$1.252

100+ parts

$1.139

1k+ parts

$1.027

10k+ parts

-

32

$1.252

$1.139

$1.027

-

MKK Technologies

India . 233 parts In-Stock

1+ parts

$1.453

100+ parts

-

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233

$1.453

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DigiPath Technology Company

USA . 233 parts In-Stock

1+ parts

$1.453

100+ parts

-

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-

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233

$1.453

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Microchip USA

USA . 2,521 parts In-Stock

1+ parts

$8.515

100+ parts

-

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-

10k+ parts

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2,521

$8.515

-

-

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

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56,986

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Kepictronics

USA . 20,000 parts In-Stock

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20,000

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QUARKTWIN TECHNOLOGY LTD

USA . 17,189 parts In-Stock

1+ parts

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17,189

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A-Z Elektronik GmbH

Germany . 12,000 parts In-Stock

1+ parts

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12,000

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Perfect Parts

USA . 6,321 parts In-Stock

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6,321

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Parana Technologies

USA . 2,369 parts In-Stock

1+ parts

-

100+ parts

$0.924

1k+ parts

-

10k+ parts

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2,369

-

$0.924

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Alle Elektronik GmbH

Germany . 1,600 parts In-Stock

1+ parts

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100+ parts

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1,600

-

-

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Northwest PG Solutions

USA . 564 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$3.547

10k+ parts

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564

-

-

$3.547

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Authorized Procurement Solutions

USA . 200 parts In-Stock

1+ parts

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100+ parts

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200

-

-

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Native Components

USA . 178 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.511

10k+ parts

-

178

-

-

$3.511

-

Overview

Unlock the potential of your projects with the BUL742C from STMicroelectronics, a trusted leader in semiconductor innovation. This high-performance NPN power BJT delivers exceptional switching capabilities, ensuring reliability in demanding applications. Crafted with precision, it offers impressive power handling up to 70W and operates seamlessly at elevated temperatures. Elevate your designs with a component that combines quality, efficiency, and durability, driving success in industrial, automotive, and consumer electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides excellent durability and resistance to environmental factors, making this BJT reliable in various applications.

Polarity or Channel Type: NPN

As an NPN transistor, this product offers fast switching speeds and high current carrying capabilities, making it ideal for a range of electronic applications.

Configuration: SINGLE

The single configuration allows for simplicity in design and easy integration into circuits, which is perfect for compact electronic designs.

Transistor Application: SWITCHING

Designed for switching applications, this BJT can efficiently control high power loads, ensuring optimal performance in power management circuits.

Package Shape: RECTANGULAR

The rectangular package shape ensures efficient space utilization on PCB layouts, allowing for more compact and efficient designs.

Terminal Form: THROUGH-HOLE

The through-hole design provides strong mechanical stability and reliability in electronic assemblies, especially in high-vibration environments.

No. of Terminals: 3

With three terminals, this BJT is easy to integrate into various circuit configurations for enhanced versatility in applications.

Maximum Power Dissipation (Abs): 70 W

A maximum power dissipation of 70 W allows this transistor to handle significant power loads, making it suitable for high-performance applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style ensures secure placement and ease of assembly, contributing to reliable connections in electronic systems.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 signifies strong amplification capability, making it effective for signal processing and switching operations.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this BJT is suitable for demanding applications, where high heat dissipation is critical.

Maximum Collector-Emitter Voltage: 400 V

The ability to handle up to 400 V collector-emitter voltage enables this component to be used in high-voltage applications, expanding its versatility.

Transistor Element Material: SILICON

The silicon material used in the transistor ensures reliable performance and stability, common in high-quality BJTs for industrial applications.

Maximum Collector Current (IC): 4 A

With a maximum collector current rating of 4 A, this transistor is capable of driving considerable loads, making it ideal for power electronics.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish enhances solderability and corrosion resistance, ensuring a long-lasting and reliable connection in PCB applications.

Terminal Position: SINGLE

Single terminal position simplifies circuit design, reducing the space needed on the PCB and allowing for easier planning in electronic layouts.

Case Connection: COLLECTOR

The collector case connection facilitates efficient heat dissipation, which is critical for maintaining performance in high-power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL742C attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL742C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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