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BUL705

STMicroelectronics

BUL705 by STMicroelectronics

BUL705 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-performance electronic circuits.

Median Price

$1.510

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,908 parts In-Stock

1+ parts

$1.510

100+ parts

$0.634

1k+ parts

$0.453

10k+ parts

$0.416

3,908

$1.510

$0.634

$0.453

$0.416

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,672 parts In-Stock

1+ parts

$1.130

100+ parts

-

1k+ parts

-

10k+ parts

-

2,672

$1.130

-

-

-

Vyrian

USA . 4,343 parts In-Stock

1+ parts

$1.190

100+ parts

-

1k+ parts

-

10k+ parts

-

4,343

$1.190

-

-

-

Anansix

USA . 866 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

866

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 253 parts In-Stock

1+ parts

$0.452

100+ parts

-

1k+ parts

$0.407

10k+ parts

-

253

$0.452

-

$0.407

-

MKK Technologies

India . 2,284 parts In-Stock

1+ parts

$0.849

100+ parts

-

1k+ parts

-

10k+ parts

-

2,284

$0.849

-

-

-

DigiPath Technology Company

USA . 2,284 parts In-Stock

1+ parts

$0.849

100+ parts

-

1k+ parts

-

10k+ parts

-

2,284

$0.849

-

-

-

Corphita

USA . 4,240 parts In-Stock

1+ parts

$1.071

100+ parts

-

1k+ parts

-

10k+ parts

-

4,240

$1.071

-

-

-

Microchip USA

USA . 5,454 parts In-Stock

1+ parts

$6.110

100+ parts

-

1k+ parts

-

10k+ parts

-

5,454

$6.110

-

-

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Component Stockers USA

USA . 653 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

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10k+ parts

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653

$99.990

-

-

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Kepictronics

USA . 56,000 parts In-Stock

1+ parts

-

100+ parts

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56,000

-

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Perfect Parts

USA . 4,433 parts In-Stock

1+ parts

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100+ parts

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4,433

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-

-

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Alle Elektronik GmbH

Germany . 3,910 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,910

-

-

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Parana Technologies

USA . 1,284 parts In-Stock

1+ parts

-

100+ parts

$0.540

1k+ parts

-

10k+ parts

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1,284

-

$0.540

-

-

Northwest PG Solutions

USA . 525 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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525

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Native Components

USA . 6 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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6

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Overview

Unlock the full potential of your electronic designs with STMicroelectronics' BUL705, a powerful NPN transistor that excels in switching applications. Renowned for their quality and innovation, STMicroelectronics ensures reliability and durability, making the BUL705 an ideal choice for demanding projects. With excellent power dissipation and a robust performance range, this transistor elevates efficiency while simplifying your circuit design, providing unmatched value and performance for engineers and hobbyists alike.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures robust protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

As an NPN type transistor, it is highly versatile for various switching and amplification applications, allowing for efficient control of current.

Configuration: SINGLE

Single configuration makes it simple to integrate into circuits, reducing complexity and saving space.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast response times and enhancing overall circuit efficiency.

Package Shape: RECTANGULAR

Rectangular package shape allows for better mounting options and utilizes board space efficiently.

Terminal Form: THROUGH-HOLE

Through-hole terminal form enhances mechanical stability and allows for easy soldering during assembly.

No. of Terminals: 3

With three terminals, this transistor is versatile for various circuit designs, providing adequate connection points for functionality.

Maximum Power Dissipation (Abs): 80 W

The ability to dissipate up to 80 W of power makes it suitable for high-power applications, preventing overheating and ensuring reliability.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers enhanced stability and ease of installation in a wide range of applications.

Minimum DC Current Gain (hFE): 16

A minimum DC current gain of 16 provides an adequate level of amplification, making it effective for various electronic applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, it is suitable for use in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 400 V

The capability to handle up to 400 V of collector-emitter voltage enhances its reliability in high-voltage applications.

Transistor Element Material: SILICON

Silicon as the element material ensures high efficiency and strong performance across a range of applications.

Maximum Collector Current (IC): 5 A

A maximum collector current rating of 5 A enables it to drive substantial loads, making it valuable for various power control applications.

Terminal Finish: Matte Tin (Sn)

The matte tin finish on terminals provides improved solderability and protects against corrosion, enhancing durability.

Terminal Position: SINGLE

Single terminal position simplifies connection and layout in electronic circuits, providing ease of assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL705 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

16

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL705 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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