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BUL7216

STMicroelectronics

BUL7216 by STMicroelectronics

BUL7216 by STMicroelectronics is a robust NPN power BJT designed for switching applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

Median Price

$1.318

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,527 parts In-Stock

1+ parts

$2.170

100+ parts

$0.944

1k+ parts

$0.620

10k+ parts

$0.588

5,527

$2.170

$0.944

$0.620

$0.588

DigiKey

USA . 1,841 parts In-Stock

1+ parts

$2.170

100+ parts

$0.943

1k+ parts

$0.690

10k+ parts

$0.588

1,841

$2.170

$0.943

$0.690

$0.588

Arrow

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.465

10k+ parts

$0.440

8,000

-

-

$0.465

$0.440

Verical

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.465

10k+ parts

$0.440

8,000

-

-

$0.465

$0.440

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,522 parts In-Stock

1+ parts

$1.492

100+ parts

-

1k+ parts

-

10k+ parts

-

4,522

$1.492

-

-

-

Vyrian

USA . 741 parts In-Stock

1+ parts

$1.570

100+ parts

-

1k+ parts

-

10k+ parts

-

741

$1.570

-

-

-

Anansix

USA . 768 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

768

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 54 parts In-Stock

1+ parts

$0.101

100+ parts

-

1k+ parts

-

10k+ parts

$0.097

54

$0.101

-

-

$0.097

Northwest PG Solutions

USA . 86 parts In-Stock

1+ parts

$0.111

100+ parts

-

1k+ parts

-

10k+ parts

$0.098

86

$0.111

-

-

$0.098

IDEA Electronic Components Group

UK . 2,167 parts In-Stock

1+ parts

$0.372

100+ parts

-

1k+ parts

$0.335

10k+ parts

-

2,167

$0.372

-

$0.335

-

MKK Technologies

India . 978 parts In-Stock

1+ parts

$0.699

100+ parts

-

1k+ parts

-

10k+ parts

-

978

$0.699

-

-

-

DigiPath Technology Company

USA . 978 parts In-Stock

1+ parts

$0.699

100+ parts

-

1k+ parts

-

10k+ parts

-

978

$0.699

-

-

-

Corphita

USA . 1,824 parts In-Stock

1+ parts

$1.413

100+ parts

-

1k+ parts

-

10k+ parts

-

1,824

$1.413

-

-

-

Microchip USA

USA . 6,756 parts In-Stock

1+ parts

$10.725

100+ parts

-

1k+ parts

-

10k+ parts

-

6,756

$10.725

-

-

-

Alle Elektronik GmbH

Germany . 3,993 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,993

-

-

-

-

Perfect Parts

USA . 3,415 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,415

-

-

-

-

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Parana Technologies

USA . 1,263 parts In-Stock

1+ parts

-

100+ parts

$0.444

1k+ parts

-

10k+ parts

-

1,263

-

$0.444

-

-

Overview

Unlock powerful performance with the BUL7216 from STMicroelectronics, a leading name in high-quality electronic components. Designed for efficient switching applications, this robust NPN transistor excels in demanding environments, handling up to 80 W of power with ease. Its reliable construction ensures durability and longevity, making it an ideal choice for industrial automation, consumer electronics, and automotive systems. Experience enhanced efficiency and dependability that elevate your projects to the next level!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used due to their efficiency and reliable switching capabilities in various circuits, making this product a versatile choice.

Configuration: SINGLE

Having a single configuration allows for straightforward integration into circuits, making it easier to design and implement.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast response times and high-speed operation in electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on PCBs and allows for efficient heat dissipation.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical connection and improved reliability, especially in high-stress environments.

No. of Terminals: 3

With only three terminals, this transistor is easy to connect and suitable for simple circuit designs.

Maximum Power Dissipation (Abs): 80 W

A maximum power dissipation of 80 W enables the transistor to handle substantial loads, making it ideal for high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides enhanced stability and ease of mounting on circuit boards and other surfaces.

Minimum DC Current Gain (hFE): 4

A minimum DC current gain of 4 allows for adequate amplification, making it effective in various signal processing applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliable performance in demanding thermal environments.

Maximum Collector-Emitter Voltage: 700 V

A maximum collector-emitter voltage of 700 V allows this transistor to withstand high voltage applications, enhancing its versatility.

Transistor Element Material: SILICON

Silicon as the element material provides excellent electrical properties and stability, ensuring reliable operation.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this transistor can efficiently handle a variety of current demands in switching applications.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and resistance to corrosion, enhancing the reliability of connections.

Terminal Position: SINGLE

Single terminal positioning simplifies the design and layout in electronic circuit boards, allowing for easier assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL7216 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

700 V

Configuration:

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL7216 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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