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2STC4793

STMicroelectronics

2STC4793 by STMicroelectronics

2STC4793 by STMicroelectronics is an NPN power BJT ideal for amplifier applications. It features a max collector-emitter voltage of 230V, a min DC current gain (hFE) of 100, and operates up to 150 °C. Its through-hole design ensures easy integration in various circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,603 parts In-Stock

1+ parts

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2,603

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Digiode

USA . 2,351 parts In-Stock

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2,351

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Vyrian

USA . 2,045 parts In-Stock

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2,045

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,540 parts In-Stock

1+ parts

$1.367

100+ parts

-

1k+ parts

$1.230

10k+ parts

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1,540

$1.367

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$1.230

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MKK Technologies

India . 1,862 parts In-Stock

1+ parts

$2.571

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-

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1,862

$2.571

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DigiPath Technology Company

USA . 1,862 parts In-Stock

1+ parts

$2.571

100+ parts

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1,862

$2.571

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AZTECH Wire

Italy . 404 parts In-Stock

1+ parts

$9.730

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404

$9.730

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Corphita

USA . 4,767 parts In-Stock

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4,767

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Alle Elektronik GmbH

Germany . 3,234 parts In-Stock

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3,234

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Parana Technologies

USA . 2,365 parts In-Stock

1+ parts

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100+ parts

$1.635

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2,365

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$1.635

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Northwest PG Solutions

USA . 257 parts In-Stock

1+ parts

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257

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Native Components

USA . 46 parts In-Stock

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46

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Overview

Unlock powerful performance with the 2STC4793 from STMicroelectronics, a trusted leader in semiconductor innovation. This high-quality NPN power BJT excels in amplifier applications, ensuring reliable operation even at elevated temperatures. Designed for efficiency and durability, it offers impressive gain and voltage handling, making it perfect for various electronic projects. Elevate your designs with a component that delivers unmatched value and reliability!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making this BJT suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications, providing versatile use in electronic circuits.

Configuration: SINGLE

A single configuration simplifies circuit design and helps in saving space on the PCB.

Transistor Application: AMPLIFIER

Designed for amplification, this transistor is ideal for audio and signal processing applications.

Package Shape: RECTANGULAR

The rectangular package shape efficiently utilizes space in device layouts, enhancing integration into compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide excellent mechanical support and ease of soldering, ensuring reliable connections in various applications.

No. of Terminals: 3

With three terminals, this BJT is straightforward to integrate into circuits, allowing for simple configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount style enhances thermal management and physical stability, making it suitable for high-performance applications.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain indicates efficient amplification, making this transistor suitable for low-power signal applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this BJT can operate reliably in demanding conditions without risk of failure.

Maximum Collector-Emitter Voltage: 230 V

The ability to handle 230 V makes it suitable for high-voltage applications, improving its versatility in different circuits.

Transistor Element Material: SILICON

Silicon provides good electrical performance and stability, making this BJT a solid choice for various electronic applications.

Maximum Collector Current (IC): 1 A

The capability of handling 1 A collector current allows for use in power applications, enhancing its functionality.

Terminal Finish: MATTE TIN

Matte tin finish ensures good solderability and corrosion resistance, which is critical for long-term reliability.

Terminal Position: SINGLE

Single terminal positioning aids in straightforward circuit design and prevents confusion during assembly.

Case Connection: ISOLATED

Isolated case connections enhance safety by preventing unintended electrical paths and improving the reliability of circuit operation.

Nominal Transition Frequency (fT): 100 MHz

A nominal transition frequency of 100 MHz allows this transistor to operate effectively at higher speeds, making it suitable for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STC4793 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

230 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STC4793 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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