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2STC5948

STMicroelectronics

2STC5948 by STMicroelectronics

2STC5948 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 200W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 8,538 parts In-Stock

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Digiode

USA . 2,984 parts In-Stock

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Anansix

USA . 1,671 parts In-Stock

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Zilex Electronics Inc.

Canada . 15 parts In-Stock

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IDEA Electronic Components Group

UK . 2,310 parts In-Stock

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$1.552

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$1.397

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$1.552

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$1.397

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MKK Technologies

India . 1,802 parts In-Stock

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$2.919

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$2.919

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DigiPath Technology Company

USA . 1,802 parts In-Stock

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$2.919

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$2.919

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AZTECH Wire

Italy . 1,154 parts In-Stock

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$21.630

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$21.630

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Alle Elektronik GmbH

Germany . 1,796 parts In-Stock

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Northwest PG Solutions

USA . 881 parts In-Stock

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Corphita

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Native Components

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Parana Technologies

USA . 92 parts In-Stock

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$1.856

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Overview

Unlock the power of efficiency with the 2STC5948 from STMicroelectronics. This robust NPN transistor is designed to excel in demanding switching applications, delivering exceptional performance and reliability. With a focus on quality and innovation, STMicroelectronics ensures that every component meets rigorous standards. Enhance your projects with the advantage of high power dissipation and temperature resilience, making the 2STC5948 an ideal choice for industrial and consumer electronics alike. Transform your designs with confidence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material provides good protection against environmental factors, enhancing the transistor's reliability in various applications.

Polarity or Channel Type: NPN

NPN configuration is widely used in switching and amplification applications, making this transistor versatile for many designs.

Configuration: SINGLE

With a single configuration, this transistor is ideal for simple circuits, reducing complexity and improving ease of use.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor can handle rapid on/off cycles, making it suitable for power management tasks.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space usage on PCB layouts, facilitating design flexibility.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical connections, ideal for high-power applications requiring strong physical durability.

No. of Terminals: 3

With three terminals, this transistor is designed for straightforward integration into circuits, simplifying the design process.

Maximum Power Dissipation (Abs): 200 W

A high power dissipation rating ensures that the transistor can handle substantial power levels, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount design allows for secure attachment to heatsinks, improving thermal management in power applications.

Minimum DC Current Gain (hFE): 35

A minimum current gain of 35 indicates good amplification capability, enhancing performance in various electronic applications.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures expands application possibilities, especially in harsh environments.

Maximum Collector-Emitter Voltage: 250 V

A high collector-emitter voltage rating provides versatility in high-voltage applications, ensuring reliability under demanding conditions.

Transistor Element Material: SILICON

Silicon, as a semiconductor material, offers great performance characteristics, including efficiency and stability in various applications.

Maximum Collector Current (IC): 17 A

Capacity to handle a maximum collector current of 17 A makes this transistor suitable for high-current tasks, enhancing its usability.

Terminal Position: SINGLE

Single terminal position simplifies layout and reduces confusion during circuit design, aiding in ease of assembly.

Nominal Transition Frequency (fT): 25 MHz

With a nominal transition frequency of 25 MHz, this transistor supports high-speed applications, making it ideal for modern electronic designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STC5948 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STC5948 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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