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2STC2510

STMicroelectronics

2STC2510 by STMicroelectronics

2STC2510 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 125W, operates up to 150 °C, and supports collector-emitter voltages of 100V. Ideal for high-performance electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,619 parts In-Stock

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8,619

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Digiode

USA . 2,488 parts In-Stock

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2,488

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Anansix

USA . 2,023 parts In-Stock

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2,023

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 4 parts In-Stock

1+ parts

$0.570

100+ parts

-

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4

$0.570

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Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$1.094

100+ parts

$0.996

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$0.897

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-

270

$1.094

$0.996

$0.897

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IDEA Electronic Components Group

UK . 667 parts In-Stock

1+ parts

$1.133

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$1.020

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667

$1.133

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$1.020

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MKK Technologies

India . 314 parts In-Stock

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$2.131

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314

$2.131

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DigiPath Technology Company

USA . 314 parts In-Stock

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$2.131

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314

$2.131

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AZTECH Wire

Italy . 1,007 parts In-Stock

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$12.500

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1,007

$12.500

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Corphita

USA . 3,819 parts In-Stock

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3,819

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Northwest PG Solutions

USA . 1,125 parts In-Stock

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1,125

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Parana Technologies

USA . 540 parts In-Stock

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$1.355

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540

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$1.355

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Native Components

USA . 353 parts In-Stock

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353

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Overview

Unlock the power of innovation with the 2STC2510 from STMicroelectronics, a leader in semiconductor solutions. This robust NPN transistor excels in switching applications, offering reliable performance and exceptional durability under high temperatures. With a compact design and efficient heat dissipation, it’s perfect for everything from power supplies to motor controls. Choose 2STC2510 for unmatched quality that drives your projects forward, delivering efficiency and longevity you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to environmental factors, making the transistor reliable in various applications.

Polarity or Channel Type: NPN

NPN transistors are generally favored for their faster switching speeds and better performance in amplifying applications, making this product suitable for a wide range of tasks.

Configuration: SINGLE

The single configuration simplifies circuit design, enabling easier integration into electronic systems without excessive complexity.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control high power and high-speed operations, ideal for modern electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape aids in efficient layout and assembly in circuit boards, optimizing space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure strong mechanical support and reliable electrical connections, enhancing the robustness of the overall circuit.

No. of Terminals: 3

With three terminals, this BJT accommodates versatile circuit configurations while maintaining simplicity in connections.

Maximum Power Dissipation (Abs): 125 W

A high power dissipation capability allows this transistor to operate effectively in high-power applications, ensuring reliability under heavy loads.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides ease of assembly and robust attachment to heatsinks or circuit boards, improving thermal management and stability.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 indicates good amplification capabilities, making this transistor suitable for various signal processing needs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this BJT is capable of functioning in challenging environments, ensuring reliability in extreme conditions.

Maximum Collector-Emitter Voltage: 100 V

The capacity to handle up to 100 V collector-emitter voltage makes it suitable for use in high-voltage applications, expanding its usability.

Transistor Element Material: SILICON

Silicon as the element material ensures favorable electrical properties, promoting efficiency and performance in various applications.

Maximum Collector Current (IC): 25 A

The ability to handle a maximum collector current of 25 A allows for powerful switching capabilities, suitable for high-current applications.

Terminal Position: SINGLE

A single terminal position facilitates straightforward integration into circuits, enhancing manufacturability and reducing complexity.

Nominal Transition Frequency (fT): 20 MHz

A nominal transition frequency of 20 MHz enables the transistor to operate effectively in high-frequency applications, ideal for modern electronic systems.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STC2510 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STC2510 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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