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2STC5200

STMicroelectronics

2STC5200 by STMicroelectronics

2STC5200 by STMicroelectronics is a NPN BJT transistor with max. power dissipation of 150W, max. collector-emitter voltage of 230V, and max. collector current of 15A. It is used as an amplifier in applications requiring high power handling capabilities and operates at temperatures up to 150°C.

Median Price

$1.151

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 200 parts In-Stock

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$1.151

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200

$1.151

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Vyrian

USA . 11,535 parts In-Stock

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11,535

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Digiode

USA . 2,328 parts In-Stock

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2,328

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VNN

France . 1,597 parts In-Stock

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1,597

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Anansix

USA . 470 parts In-Stock

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470

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Lakeland Logistics Inc

USA . 275 parts In-Stock

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275

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Bristol Electronics

USA . 275 parts In-Stock

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275

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Dan-Mar Components

USA . 205 parts In-Stock

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205

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ACDS - Activité Composants Distribution Service

France . 31 parts In-Stock

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Lantek

USA . 25 parts In-Stock

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25

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Zilex Electronics Inc.

Canada . 20 parts In-Stock

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Distributors (Availability)

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$1.128

100+ parts

-

1k+ parts

$1.083

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2,000

$1.128

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$1.083

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Continental Prestige Electronics

USA . 5,063 parts In-Stock

1+ parts

$1.151

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$1.128

5,063

$1.151

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$1.128

Argo Parts USA

USA . 1,319 parts In-Stock

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$1.151

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1,319

$1.151

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IDEA Electronic Components Group

UK . 683 parts In-Stock

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$1.190

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$1.071

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683

$1.190

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$1.071

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MKK Technologies

India . 207 parts In-Stock

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$2.239

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207

$2.239

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DigiPath Technology Company

USA . 207 parts In-Stock

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$2.239

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207

$2.239

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AZTECH Wire

Italy . 771 parts In-Stock

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$6.373

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771

$6.373

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Ampacity Inc.

Singapore . 1,221 parts In-Stock

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$32.050

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Lixinc

USA . 5,586 parts In-Stock

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Corphita

USA . 4,245 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,540 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,850 parts In-Stock

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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Parana Technologies

USA . 1,548 parts In-Stock

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$1.423

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$1.423

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Perfect Parts

USA . 1,175 parts In-Stock

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Assy Fe

Spain . 1,050 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Unleash the power of innovation with the 2STC5200 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Power Bipolar Junction Transistors (BJT) like no other. Ideal for amplifier applications, this NPN transistor offers a maximum collector-emitter voltage of 230V and a maximum power dissipation of 150W. With a minimum DC current gain of 35 and a nominal transition frequency of 30MHz, this transistor provides superior performance and reliability. Trust STMicroelectronics to bring you cutting-edge technology that exceeds expectations and unlocks endless possibilities for your projects. Elevate your designs with the 2STC5200 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, offering high performance and efficiency.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces the risk of errors, making it easy to integrate into electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and signal amplification.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into circuit boards, saving space and improving overall design flexibility.

Terminal Form: THROUGH-HOLE

The through-hole terminals offer strong mechanical connections and easy soldering, ensuring reliable electrical connections.

No. of Terminals: 3

With three terminals, this transistor provides flexibility in circuit design and connection options.

Maximum Power Dissipation (Abs): 150 W

This high power dissipation capability allows the transistor to handle high voltage and current loads, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides secure and stable mounting for the transistor, reducing the risk of damage or failure.

Minimum DC Current Gain (hFE): 35

The high minimum current gain ensures stable and consistent amplification of signals in various circuits.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand harsh environmental conditions without compromising performance.

Maximum Collector-Emitter Voltage: 230 V

This high voltage rating allows the transistor to handle high voltage applications with ease, ensuring reliable operation.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and reliability, making them a popular choice for various electronic devices.

Maximum Collector Current (IC): 15 A

With a high collector current rating, this transistor can handle high currents without overheating or failing.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and reduces the risk of errors during installation.

Nominal Transition Frequency (fT): 30 MHz

The high transition frequency allows for fast switching speeds and high-frequency operation in various electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STC5200 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

230 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STC5200 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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