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2STC5949

STMicroelectronics

2STC5949 by STMicroelectronics

2STC5949 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 220W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,664 parts In-Stock

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6,664

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Anansix

USA . 1,231 parts In-Stock

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Digiode

USA . 1,208 parts In-Stock

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1,208

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R&J Components

USA . 425 parts In-Stock

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425

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Sensible Micro Corp

USA . 319 parts In-Stock

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319

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Cyclops Electronics Ltd

UK . 28 parts In-Stock

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28

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Zilex Electronics Inc.

Canada . 20 parts In-Stock

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20

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Distributors (Availability)

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Native Components

USA . 334 parts In-Stock

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$0.038

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$0.036

334

$0.038

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$0.036

IDEA Electronic Components Group

UK . 408 parts In-Stock

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$1.524

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$1.371

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408

$1.524

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$1.371

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MKK Technologies

India . 1,247 parts In-Stock

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$2.865

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$2.865

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DigiPath Technology Company

USA . 1,247 parts In-Stock

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$2.865

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$2.865

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AZTECH Wire

Italy . 1,203 parts In-Stock

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$13.800

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Corphita

USA . 4,682 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,862 parts In-Stock

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Northwest PG Solutions

USA . 1,130 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,100 parts In-Stock

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Parana Technologies

USA . 171 parts In-Stock

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$1.822

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171

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$1.822

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Overview

Unlock unparalleled performance with the 2STC5949 from STMicroelectronics, a trusted leader in cutting-edge technology. This NPN power BJT is expertly designed for efficient switching applications, boasting robust durability and high power dissipation capabilities. With its reliable performance and versatility, it’s perfect for everything from consumer electronics to industrial systems. Elevate your projects with proven quality and experience the advantages of enhanced efficiency and reliability with every use!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to environmental factors, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors offer better electron mobility, which allows for faster switching speeds and improved performance in amplification and switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces the overall footprint, making it ideal for compact applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control power delivery in various circuits, enhancing versatility.

Package Shape: RECTANGULAR

The rectangular package shape helps optimize space utilization on circuit boards, facilitating easier integration into various designs.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for robust physical connections, providing reliable performance in demanding environments.

No. of Terminals: 3

Having three terminals facilitates straightforward connections and efficient operation in circuit designs, enhancing reliability.

Maximum Power Dissipation (Abs): 220 W

A high maximum power dissipation capability ensures this transistor can handle substantial loads without overheating, increasing efficiency.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers excellent mechanical stability, which is essential for maintaining performance in high-vibration environments.

Minimum DC Current Gain (hFE): 35

A minimum hFE of 35 indicates good amplification capabilities, making this transistor suitable for low-power amplification applications.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance ensures reliable performance in harsh environments, expanding the range of potential applications.

Maximum Collector-Emitter Voltage: 250 V

A high maximum collector-emitter voltage rating allows this transistor to function effectively in high-voltage applications, enhancing its versatility.

Transistor Element Material: SILICON

Silicon as the base material provides excellent conductivity and thermal stability, ensuring reliable performance in various conditions.

Maximum Collector Current (IC): 17 A

The capability to handle up to 17 A of collector current makes this transistor suitable for heavy-duty applications, ensuring robustness.

Terminal Position: SINGLE

Single terminal position simplifies design and layout, making integration easier in various circuit configurations.

Nominal Transition Frequency (fT): 25 MHz

A nominal transition frequency of 25 MHz provides good frequency response characteristics, making it suitable for a variety of signal processing applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STC5949 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STC5949 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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