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ST13003N

STMicroelectronics

ST13003N by STMicroelectronics

ST13003N from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 20W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for various electronic circuits requiring reliable performance.

Median Price

$2.150

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 969 parts In-Stock

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$1.268

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969

$1.268

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Chip1Stop

Japan . 969 parts In-Stock

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$2.150

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969

$2.150

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DigiKey

USA . 347 parts In-Stock

1+ parts

$4.050

100+ parts

$1.874

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347

$4.050

$1.874

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Verical

USA . 969 parts In-Stock

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969

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Digiode

USA . 1,790 parts In-Stock

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$1.205

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1,790

$1.205

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Lantek

USA . 48,000 parts In-Stock

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48,000

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Vyrian

USA . 8,909 parts In-Stock

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Anansix

USA . 2,764 parts In-Stock

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2,764

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 19 parts In-Stock

1+ parts

$0.413

100+ parts

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$0.372

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19

$0.413

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$0.372

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MKK Technologies

India . 1,438 parts In-Stock

1+ parts

$0.777

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1,438

$0.777

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DigiPath Technology Company

USA . 1,438 parts In-Stock

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$0.777

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1,438

$0.777

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Corphita

USA . 1,674 parts In-Stock

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$1.141

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1,674

$1.141

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GreenTree Electronics

Israel . 48,000 parts In-Stock

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48,000

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Infinite Electronics LLP (Excess)

. 3,716 parts In-Stock

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3,716

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Microchip USA

USA . 2,478 parts In-Stock

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2,478

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Parana Technologies

USA . 1,883 parts In-Stock

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$0.494

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1,883

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$0.494

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Alle Elektronik GmbH

Germany . 882 parts In-Stock

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882

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Perfect Parts

USA . 432 parts In-Stock

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432

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Overview

Elevate your designs with the ST13003N from STMicroelectronics, a trusted name in power solutions. This robust NPN transistor ensures reliability and efficiency for all your switching applications, providing exceptional performance under demanding conditions. With its durable plastic/epoxy packaging and impressive thermal management, the ST13003N is ideal for various industries—from automotive to consumer electronics—delivering unmatched value and longevity for your projects. Choose quality; choose STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body offers durability and resistance to environmental factors, ensuring reliability in various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used for switching and amplification applications, making this product versatile for different circuit designs.

Configuration: SINGLE

A single configuration allows for easier integration into circuits, simplifying design and reducing space requirements.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor can effectively control power and signal flow, making it ideal for various electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact design, facilitating space-efficient layouts in electronic projects.

Terminal Form: THROUGH-HOLE

Through-hole mounting offers excellent mechanical support and stability, enhancing reliability in permanent soldered connections.

No. of Terminals: 3

With three terminals, the transistor allows for straightforward connectivity and effective circuit functionality.

Maximum Power Dissipation (Abs): 20 W

A maximum power dissipation of 20 W means that this transistor can handle significant power levels, suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides secure installation options and enhances heat dissipation, promoting better thermal management in circuits.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 ensures adequate amplification capabilities, making it effective in amplification and switching applications.

Maximum Operating Temperature: 150 °C

Operating at temperatures up to 150 °C allows this transistor to perform reliably in high-temperature environments.

Maximum Collector-Emitter Voltage: 400 V

A maximum collector-emitter voltage of 400 V means the transistor can handle high voltage applications, providing flexibility in design.

Transistor Element Material: SILICON

Silicon is a common material for transistors, ensuring good thermal stability and efficiency in electrical conduction.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, this transistor can support various current loads, making it applicable for diverse circuitry needs.

Terminal Finish: MATTE TIN

The matte tin terminal finish promotes good solderability and corrosion resistance, ensuring long-term reliability in usage.

Terminal Position: SINGLE

A single terminal position facilitates easy implementation in circuit boards and minimizes design complexity.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST13003N attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ST13003N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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