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ST13005

STMicroelectronics

ST13005 by STMicroelectronics

ST13005 by STMicroelectronics is a NPN BJT transistor with VCEsat of 1V, IC of 4A, and hFE of 8. Ideal for switching applications with max VCE of 400V and Ptot of 75W. Package style is flange mount, terminal finish matte tin, and operating temp up to 150 °C.

Median Price

$0.706

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,240 parts In-Stock

1+ parts

$0.660

100+ parts

$0.467

1k+ parts

$0.416

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-

1,240

$0.660

$0.467

$0.416

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Arrow

USA . 100 parts In-Stock

1+ parts

$0.751

100+ parts

$0.657

1k+ parts

$0.490

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100

$0.751

$0.657

$0.490

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Adafruit Industries

USA . 3,000 parts In-Stock

1+ parts

$1.933

100+ parts

$1.759

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$1.585

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3,000

$1.933

$1.759

$1.585

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Verical

USA . 91 parts In-Stock

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$0.654

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$0.488

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91

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$0.654

$0.488

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Distributors (In-Stock)

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Ozdisan Elektronik

Türkiye . 252 parts In-Stock

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$0.355

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252

$0.355

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Vyrian

USA . 3,702 parts In-Stock

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$0.490

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3,702

$0.490

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Digiode

USA . 2,218 parts In-Stock

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$0.596

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$0.596

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Cyclops Electronics Ltd

UK . 11,510 parts In-Stock

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Zilex Electronics Inc.

Canada . 2,000 parts In-Stock

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Chip Stock

USA . 861 parts In-Stock

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Anansix

USA . 827 parts In-Stock

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827

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Micros sp.j. W. Kędra i J. Lic

Poland . 200 parts In-Stock

1+ parts

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100+ parts

$0.866

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$0.812

10k+ parts

$0.812

200

-

$0.866

$0.812

$0.812

Micros

Poland . 150 parts In-Stock

1+ parts

-

100+ parts

$0.970

1k+ parts

$0.730

10k+ parts

$0.730

150

-

$0.970

$0.730

$0.730

R&J Components

USA . 80 parts In-Stock

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80

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Pegasus Components GmbH

Germany . 50 parts In-Stock

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50

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LittleDiode

UK . 43 parts In-Stock

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43

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Bristol Electronics

USA . 7 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 4,550 parts In-Stock

1+ parts

$0.564

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4,550

$0.564

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IDEA Electronic Components Group

UK . 1,338 parts In-Stock

1+ parts

$1.432

100+ parts

-

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$1.288

10k+ parts

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1,338

$1.432

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$1.288

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$1.933

100+ parts

$1.759

1k+ parts

$1.585

10k+ parts

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3,000

$1.933

$1.759

$1.585

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MKK Technologies

India . 643 parts In-Stock

1+ parts

$2.692

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643

$2.692

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DigiPath Technology Company

USA . 643 parts In-Stock

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$2.692

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643

$2.692

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Metaverse IC Inc.

Canada . 146,750 parts In-Stock

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Kepictronics

USA . 57,050 parts In-Stock

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Perfect Parts

USA . 29,830 parts In-Stock

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Epart123

USA . 25,000 parts In-Stock

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$0.240

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$0.240

GreenTree Electronics

Israel . 25,000 parts In-Stock

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Infinite Electronics LLP (Excess)

. 24,462 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,209 parts In-Stock

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Microchip USA

USA . 7,449 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,443 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,845 parts In-Stock

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3,845

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S.R.D Solutions

India . 3,805 parts In-Stock

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Parana Technologies

USA . 2,123 parts In-Stock

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$1.712

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$1.712

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Authorized Procurement Solutions

USA . 959 parts In-Stock

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959

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ChipTracer

USA . 89 parts In-Stock

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Overview

Elevate your power management solutions with the ST13005 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Power Bipolar Junction Transistors for a variety of switching applications. With a maximum collector-emitter voltage of 400V and a minimum DC current gain of 8, this NPN transistor offers reliable performance and efficiency. Whether you're looking to optimize power dissipation or enhance switching capabilities, the ST13005 is the perfect choice for your electronic projects. Experience the value and benefits that only STMicroelectronics can provide, and take your designs to the next level with the ST13005.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this transistor lightweight, durable, and resistant to external environmental factors.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile and suitable for a wide range of electronic circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into electronic systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and efficient performance when used in circuits that require rapid on/off switching.

Maximum VCEsat: 1 V

The low saturation voltage of 1 V ensures minimal power loss during operation, making this transistor energy-efficient.

Maximum Power Dissipation: 75 W

With a high maximum power dissipation of 75 W, this transistor can handle high power levels without overheating, ensuring reliable performance in demanding applications.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage rating of 400 V allows this transistor to be used in circuits with high voltage requirements, increasing its versatility.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance, reliability, and temperature stability, making this product a reliable choice for various electronic applications.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4 A, this transistor can handle high current loads, making it suitable for power electronics applications.

Nominal Transition Frequency (fT): 4 MHz

The high nominal transition frequency of 4 MHz indicates that this transistor can operate at high frequencies, making it ideal for RF and high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST13005 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

75 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

ST13005 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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