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ST13003DN

STMicroelectronics

ST13003DN by STMicroelectronics

ST13003DN by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 20W, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

Median Price

$1.354

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 488 parts In-Stock

1+ parts

$0.977

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488

$0.977

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Chip1Stop

Japan . 988 parts In-Stock

1+ parts

$1.730

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988

$1.730

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Verical

USA . 488 parts In-Stock

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488

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Distributors (In-Stock)

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Digiode

USA . 3,289 parts In-Stock

1+ parts

$0.928

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3,289

$0.928

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Vyrian

USA . 12,959 parts In-Stock

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12,959

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Anansix

USA . 104 parts In-Stock

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104

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Distributors (Availability)

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.450

100+ parts

$0.410

1k+ parts

$0.369

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-

200

$0.450

$0.410

$0.369

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Corphita

USA . 836 parts In-Stock

1+ parts

$0.879

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-

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836

$0.879

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Component Stockers USA

USA . 1,485 parts In-Stock

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$1.100

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$1.100

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1,485

$1.100

$1.100

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IDEA Electronic Components Group

UK . 943 parts In-Stock

1+ parts

$1.310

100+ parts

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$1.179

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943

$1.310

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$1.179

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MKK Technologies

India . 1,594 parts In-Stock

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$2.464

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1,594

$2.464

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DigiPath Technology Company

USA . 1,594 parts In-Stock

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$2.464

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1,594

$2.464

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AZTECH Wire

Italy . 1,004 parts In-Stock

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$8.600

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1,004

$8.600

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QUARKTWIN TECHNOLOGY LTD

USA . 29,066 parts In-Stock

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29,066

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Alle Elektronik GmbH

Germany . 4,062 parts In-Stock

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4,062

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Parana Technologies

USA . 1,876 parts In-Stock

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$1.566

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1,876

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$1.566

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Perfect Parts

USA . 1,431 parts In-Stock

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1,431

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Overview

Elevate your power management solutions with the ST13003DN from STMicroelectronics, a leader in innovative semiconductor technology. This NPN bipolar junction transistor is engineered for optimal switching performance, delivering reliability and efficiency across various applications, from industrial controls to consumer electronics. With robust thermal capabilities and a compact design, it ensures seamless integration while maximizing your circuit's performance—your go-to choice for quality and value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material provides good protection against environmental factors, making the transistor reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are advantageous in switching applications due to their ability to provide high-speed switching and efficient current amplification.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances the transistor's performance in various applications, allowing for better protection and functionality.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is ideal for controlling circuits and efficiently managing power.

Package Shape: RECTANGULAR

Rectangular packages optimize space utilization on PCBs and are easier to mount, making assembly simpler.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are suitable for high-power applications, enhancing stability.

No. of Terminals: 3

Having three terminals allows for standard connectivity options, making it compatible with most circuit designs.

Maximum Power Dissipation (Abs): 20 W

A high power dissipation rating ensures the transistor can handle substantial thermal loads, increasing reliability in demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides better mechanical stability during operation, making it suitable for various mounting scenarios.

Minimum DC Current Gain (hFE): 5

A minimum gain of 5 ensures adequate amplification, allowing the transistor to efficiently control larger currents.

Maximum Operating Temperature: 150 °C

With a high temperature tolerance, this product is ideal for applications in environments with elevated temperatures, ensuring durability.

Maximum Collector-Emitter Voltage: 400 V

A high voltage rating allows this transistor to work effectively in high-voltage circuits, providing versatile application possibilities.

Transistor Element Material: SILICON

Silicon materials ensure reliable performance and are widely used in electronics, guaranteeing compatibility and availability.

Maximum Collector Current (IC): 1 A

A maximum collector current rating of 1 A allows for efficient control of larger loads, making it suitable for power applications.

Terminal Finish: MATTE TIN

Matte tin finish provides additional corrosion resistance, ensuring longer life and maintaining performance over time.

Terminal Position: SINGLE

Single terminal position simplifies design and layout, making integration into various circuits straightforward.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST13003DN attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ST13003DN Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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