Loading...

ST13003-B

STMicroelectronics

ST13003-B by STMicroelectronics

ST13003-B by STMicroelectronics is a NPN BJT transistor with 400V VCE, 1.5A IC, and 3V VCEsat. Ideal for switching applications, it has a max power dissipation of 40W and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,321 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,321

-

-

-

-

Anansix

USA . 1,479 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,479

-

-

-

-

Digiode

USA . 784 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

784

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,698 parts In-Stock

1+ parts

$0.868

100+ parts

-

1k+ parts

$0.781

10k+ parts

-

1,698

$0.868

-

$0.781

-

MKK Technologies

India . 1,859 parts In-Stock

1+ parts

$1.631

100+ parts

-

1k+ parts

-

10k+ parts

-

1,859

$1.631

-

-

-

DigiPath Technology Company

USA . 1,859 parts In-Stock

1+ parts

$1.631

100+ parts

-

1k+ parts

-

10k+ parts

-

1,859

$1.631

-

-

-

Corphita

USA . 4,708 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,708

-

-

-

-

Parana Technologies

USA . 717 parts In-Stock

1+ parts

-

100+ parts

$1.037

1k+ parts

-

10k+ parts

-

717

-

$1.037

-

-

Overview

Upgrade your power applications with the ST13003-B from STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-notch quality and reliability. This NPN Power Bipolar Junction Transistor is ideal for switching applications, offering a maximum VCEsat of 3V and a maximum collector current of 1.5A. With a maximum operating temperature of 150 °C and a maximum power dissipation of 40W, this transistor provides excellent performance and durability. Trust STMicroelectronics to provide you with cutting-edge technology that meets your power needs efficiently and effectively.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in general electronic circuits, making this product versatile.

Configuration: SINGLE

Simplifies circuit design and integration, making it easy to use in various projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Maximum VCEsat: 3 V

Low saturation voltage helps minimize power loss and improve efficiency in switch applications.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into electronic circuits.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections with other components in a circuit.

Maximum Power Dissipation (Abs): 40 W

Can handle high power dissipation, suitable for applications requiring a high wattage capacity.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and heat dissipation, enhancing overall performance.

Maximum Power Dissipation Ambient: 40 W

Can withstand high ambient temperatures while maintaining efficient operation.

Minimum DC Current Gain (hFE): 15

Provides sufficient current gain for stable and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance or reliability.

Maximum Collector-Emitter Voltage: 400 V

Suitable for applications requiring high voltage handling capability.

Transistor Element Material: SILICON

Provides reliable and durable performance, common material choice for transistors.

Maximum Collector Current (IC): 1.5 A

Capable of handling moderate current levels, suitable for various electronic applications.

Maximum Turn Off Time (toff): 4700 ns

Fast turn-off time ensures efficient operation in switching applications.

Terminal Finish: Matte Tin (Sn)

Provides corrosion resistance and ensures good electrical conductivity for reliable connections.

Terminal Position: SINGLE

Simplifies installation and connection processes, ensuring ease of use.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST13003-B attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

40 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

4700 ns

Maximum VCEsat:

3 V

Trade Compliance

ST13003-B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19