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ST13007DFP

STMicroelectronics

ST13007DFP by STMicroelectronics

ST13007DFP by STMicroelectronics is a NPN BJT transistor with 400V VCEO, 8A IC, and 36W Ptot. It's used for switching applications due to its single configuration with built-in diode. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$1.122

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 199 parts In-Stock

1+ parts

$1.430

100+ parts

$0.909

1k+ parts

$0.795

10k+ parts

$0.708

199

$1.430

$0.909

$0.795

$0.708

DigiKey

USA . 123 parts In-Stock

1+ parts

$1.720

100+ parts

$0.744

1k+ parts

-

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-

123

$1.720

$0.744

-

-

Chip1Stop

Japan . 595 parts In-Stock

1+ parts

-

100+ parts

$1.060

1k+ parts

$0.766

10k+ parts

-

595

-

$1.060

$0.766

-

Arrow

USA . 550 parts In-Stock

1+ parts

-

100+ parts

-

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$0.627

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550

-

-

$0.627

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Verical

USA . 45 parts In-Stock

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-

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$1.122

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-

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45

-

$1.122

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.769

100+ parts

-

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10

$0.769

-

-

-

Digiode

USA . 4,497 parts In-Stock

1+ parts

$1.358

100+ parts

-

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4,497

$1.358

-

-

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ACDS - Activité Composants Distribution Service

France . 13,000 parts In-Stock

1+ parts

-

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13,000

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-

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Vyrian

USA . 8,133 parts In-Stock

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-

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8,133

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-

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Speed Components Ltd

Israel . 1,537 parts In-Stock

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-

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1,537

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Anansix

USA . 853 parts In-Stock

1+ parts

-

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853

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LIBRA Elektronik GmbH

Germany . 762 parts In-Stock

1+ parts

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762

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-

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TME

Poland . 595 parts In-Stock

1+ parts

-

100+ parts

$1.034

1k+ parts

-

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595

-

$1.034

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,453 parts In-Stock

1+ parts

$0.383

100+ parts

-

1k+ parts

-

10k+ parts

-

1,453

$0.383

-

-

-

Ampacity Inc.

Singapore . 307 parts In-Stock

1+ parts

$0.482

100+ parts

-

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307

$0.482

-

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IDEA Electronic Components Group

UK . 1,659 parts In-Stock

1+ parts

$0.659

100+ parts

-

1k+ parts

$0.593

10k+ parts

-

1,659

$0.659

-

$0.593

-

Semicontronic

India . 147 parts In-Stock

1+ parts

$0.670

100+ parts

$0.653

1k+ parts

$0.650

10k+ parts

-

147

$0.670

$0.653

$0.650

-

Argo Parts USA

USA . 4,206 parts In-Stock

1+ parts

$0.769

100+ parts

-

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4,206

$0.769

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-

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Continental Prestige Electronics

USA . 2,807 parts In-Stock

1+ parts

$0.769

100+ parts

-

1k+ parts

-

10k+ parts

$0.754

2,807

$0.769

-

-

$0.754

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.769

100+ parts

-

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100

$0.769

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Corohmni

South Africa . 27 parts In-Stock

1+ parts

$1.219

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-

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27

$1.219

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MKK Technologies

India . 2,108 parts In-Stock

1+ parts

$1.239

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2,108

$1.239

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DigiPath Technology Company

USA . 2,108 parts In-Stock

1+ parts

$1.239

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2,108

$1.239

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Corphita

USA . 3,483 parts In-Stock

1+ parts

$1.287

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3,483

$1.287

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$1.743

100+ parts

$1.586

1k+ parts

$1.429

10k+ parts

-

2,000

$1.743

$1.586

$1.429

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Microchip USA

USA . 382 parts In-Stock

1+ parts

$9.165

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382

$9.165

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Perfect Parts

USA . 60,088 parts In-Stock

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60,088

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Cyclops Electronics Ltd (Excess)

UK . 13,000 parts In-Stock

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13,000

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Glotronic Ltd.

UK . 10,400 parts In-Stock

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10,400

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Kepictronics

USA . 9,000 parts In-Stock

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9,000

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Parana Technologies

USA . 2,149 parts In-Stock

1+ parts

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$0.788

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2,149

-

$0.788

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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2,000

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Alle Elektronik GmbH

Germany . 1,508 parts In-Stock

1+ parts

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1,508

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-

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-

Overview

Enhance your power management solutions with the ST13007DFP from STMicroelectronics, a leading manufacturer known for its high-quality components. This Power Bipolar Junction Transistor (BJT) offers reliable performance in switching applications with a maximum collector-emitter voltage of 400V and a maximum collector current of 8A. The single configuration with built-in diode ensures ease of use and efficiency. Designed with a durable plastic/epoxy package body material, this transistor is a cost-effective solution for various electronic projects. Trust STMicroelectronics to deliver superior products that meet your needs for power control and management.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, making it easy to handle and ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor suitable for a wide range of applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient switching and protection against reverse current flow, adding versatility to the transistor's applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast response times and efficient performance in various electronic circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and space-saving in circuit designs, making it convenient for integration into electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection and easy soldering, ensuring reliable performance and easy installation in circuit boards.

Maximum Power Dissipation (Abs): 36 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure mounting and heat dissipation, ensuring stable operation even under high temperatures.

Minimum DC Current Gain (hFE): 8

A minimum DC current gain of 8 ensures reliable amplification and switching performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without degradation, ensuring longevity and reliability in harsh environments.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage rating of 400 V allows this transistor to be used in high voltage applications, expanding its versatility.

Transistor Element Material: SILICON

Silicon-based transistor elements offer high performance and reliability, making this transistor a dependable choice for various electronic applications.

Maximum Collector Current (IC): 8 A

With a maximum collector current of 8 A, this transistor can handle high current loads without saturation, making it suitable for power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides corrosion resistance and good solderability, ensuring long-term performance and ease of assembly in circuit boards.

Terminal Position: SINGLE

Single terminal position simplifies installation and ensures proper orientation, making it easy to integrate this transistor into circuit designs.

Case Connection: ISOLATED

Isolated case connection provides electrical insulation and reduces interference, enhancing the reliability and performance of the transistor in complex circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST13007DFP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ST13007DFP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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