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ST13003D-K

STMicroelectronics

ST13003D-K by STMicroelectronics

ST13003D-K from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

Median Price

$0.960

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,913 parts In-Stock

1+ parts

$0.960

100+ parts

$0.393

1k+ parts

$0.276

10k+ parts

-

1,913

$0.960

$0.393

$0.276

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,275 parts In-Stock

1+ parts

$1.064

100+ parts

-

1k+ parts

-

10k+ parts

-

3,275

$1.064

-

-

-

Vyrian

USA . 1,420 parts In-Stock

1+ parts

$1.120

100+ parts

-

1k+ parts

-

10k+ parts

-

1,420

$1.120

-

-

-

Anansix

USA . 452 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

452

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,961 parts In-Stock

1+ parts

$0.730

100+ parts

-

1k+ parts

$0.657

10k+ parts

-

1,961

$0.730

-

$0.657

-

Corphita

USA . 1,892 parts In-Stock

1+ parts

$1.008

100+ parts

-

1k+ parts

-

10k+ parts

-

1,892

$1.008

-

-

-

MKK Technologies

India . 1,525 parts In-Stock

1+ parts

$1.374

100+ parts

-

1k+ parts

-

10k+ parts

-

1,525

$1.374

-

-

-

DigiPath Technology Company

USA . 1,525 parts In-Stock

1+ parts

$1.374

100+ parts

-

1k+ parts

-

10k+ parts

-

1,525

$1.374

-

-

-

Microchip USA

USA . 4,077 parts In-Stock

1+ parts

$4.615

100+ parts

-

1k+ parts

-

10k+ parts

-

4,077

$4.615

-

-

-

Kepictronics

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Perfect Parts

USA . 2,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,800

-

-

-

-

Parana Technologies

USA . 2,246 parts In-Stock

1+ parts

-

100+ parts

$0.873

1k+ parts

-

10k+ parts

-

2,246

-

$0.873

-

-

Alle Elektronik GmbH

Germany . 1,985 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,985

-

-

-

-

Overview

Unlock the power of efficiency with the ST13003D-K from STMicroelectronics, a trusted leader in semiconductor innovation. This high-quality NPN transistor is designed for seamless switching applications, ensuring reliability in even the most demanding environments. With its robust construction and excellent thermal performance, it provides unmatched value for customers seeking dependable solutions. Elevate your projects with a component that promises longevity and exceptional performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers durability and resistance to environmental factors, making the product suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching and amplifying applications, making this product versatile and efficient for different designs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode configuration provides added protection against back EMF, enhancing reliability in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this BJT is optimized for efficient on/off control in electronic circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for effective heat dissipation and ease of PCB layout, enhancing performance.

Terminal Form: THROUGH-HOLE

Through-hole terminal form ensures secure mounting and stable connections in various circuit designs.

No. of Terminals: 3

With three terminals, this BJT offers a straightforward connection for easy integration into electronic circuits.

Maximum Power Dissipation (Abs): 40 W

A maximum power dissipation of 40 W allows this transistor to handle substantial power loads, making it suitable for robust applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides enhanced stability and ease of installation in various setups.

Minimum DC Current Gain (hFE): 5

A minimum hFE of 5 ensures that this transistor provides adequate amplification for low current applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this BJT can function in high-temperature environments, increasing its versatility.

Maximum Collector-Emitter Voltage: 400 V

This high maximum voltage rating makes the transistor suitable for high-voltage applications, enhancing design flexibility.

Transistor Element Material: SILICON

Made of silicon, this BJT ensures high efficiency and performance, making it a reliable choice for various applications.

Maximum Collector Current (IC): 1.5 A

A maximum collector current of 1.5 A allows this transistor to power moderate loads effectively, expanding its application range.

Terminal Finish: MATTE TIN

The matte tin finish offers good solderability and enhances corrosion resistance, improving long-term performance.

Terminal Position: SINGLE

Having a single terminal position simplifies the design layout and ensures easy access for soldering and connections.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST13003D-K attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ST13003D-K Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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