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ST13005D

STMicroelectronics

ST13005D by STMicroelectronics

ST13005D by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. It has a max. collector current of 4A and min DC current gain of 8, operating up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,987 parts In-Stock

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3,987

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Vyrian

USA . 1,448 parts In-Stock

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1,448

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Anansix

USA . 1,070 parts In-Stock

1+ parts

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1,070

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 127 parts In-Stock

1+ parts

$1.288

100+ parts

-

1k+ parts

$1.159

10k+ parts

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127

$1.288

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$1.159

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MKK Technologies

India . 1,483 parts In-Stock

1+ parts

$2.422

100+ parts

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1,483

$2.422

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DigiPath Technology Company

USA . 1,483 parts In-Stock

1+ parts

$2.422

100+ parts

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1,483

$2.422

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Corphita

USA . 1,550 parts In-Stock

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1,550

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Parana Technologies

USA . 896 parts In-Stock

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100+ parts

$1.540

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896

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$1.540

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Overview

Unlock the power of innovation with the ST13005D by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Power Bipolar Junction Transistors with applications in switching. The ST13005D offers customers exceptional value and benefits, with a maximum collector-emitter voltage of 400V and a maximum collector current of 4A. Trust in STMicroelectronics for reliable performance and cutting-edge technology to meet all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

Being an NPN transistor, it allows for efficient amplification and switching in electronic circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity in the overall system.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast and reliable switching operations.

Package Shape: RECTANGULAR

The rectangular shape provides easy mounting and integration into various electronic devices and systems.

Terminal Form: THROUGH-HOLE

The through-hole terminals offer secure and stable connections in circuit boards, preventing any potential damage.

No. of Terminals: 3

With three terminals, this transistor enables versatile connectivity options for different circuit configurations.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy installation and secure mounting in electronic devices.

Minimum DC Current Gain (hFE): 8

The minimum DC current gain of 8 ensures reliable and consistent performance in various operating conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage rating of 400V allows for handling of high voltage applications.

Transistor Element Material: SILICON

Silicon material in the transistor element ensures high performance and durability for long-term use.

Maximum Collector Current (IC): 4 A

The maximum collector current of 4A enables the transistor to handle high current loads with efficiency.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST13005D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ST13005D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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