Loading...

ST13003-A

STMicroelectronics

ST13003-A by STMicroelectronics

ST13003-A by STMicroelectronics is a NPN BJT transistor with 400V VCE, 1.5A IC, and 3V VCEsat. Ideal for switching applications, it has a max power dissipation of 40W and operates up to 150 °C. The package is rectangular with through-hole terminals in matte tin finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,728 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,728

-

-

-

-

Digiode

USA . 1,798 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,798

-

-

-

-

Anansix

USA . 388 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

388

-

-

-

-

LWI Electronics Inc

India . 38 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

38

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 97 parts In-Stock

1+ parts

$0.540

100+ parts

-

1k+ parts

$0.486

10k+ parts

-

97

$0.540

-

$0.486

-

MKK Technologies

India . 133 parts In-Stock

1+ parts

$1.016

100+ parts

-

1k+ parts

-

10k+ parts

-

133

$1.016

-

-

-

DigiPath Technology Company

USA . 133 parts In-Stock

1+ parts

$1.016

100+ parts

-

1k+ parts

-

10k+ parts

-

133

$1.016

-

-

-

Corphita

USA . 3,265 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,265

-

-

-

-

Parana Technologies

USA . 2,008 parts In-Stock

1+ parts

-

100+ parts

$0.646

1k+ parts

-

10k+ parts

-

2,008

-

$0.646

-

-

Kepictronics

USA . 1,950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,950

-

-

-

-

Overview

Unlock the power of seamless switching with the ST13003-A by STMicroelectronics. Crafted with precision and expertise, this NPN Power Bipolar Junction Transistor offers exceptional quality and reliability for a wide range of applications. From industrial automation to consumer electronics, this transistor delivers unparalleled performance with its high DC current gain, low VCEsat, and robust construction. Say goodbye to compromises and experience the value of efficiency and versatility that only STMicroelectronics can provide. Elevate your designs with the ST13003-A today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: NPN

Allows for the transistor to be used in a wide range of applications, especially in switching circuits.

Configuration: SINGLE

Simplified design and ease of use for circuit integration.

Transistor Application: SWITCHING

Specifically designed for switching applications, making it efficient and reliable for such operations.

Maximum VCEsat: 3 V

Low saturation voltage ensures minimal power loss and improved efficiency in switching operations.

Package Shape: RECTANGULAR

Compact and space-saving design for easy integration into circuits.

Terminal Form: THROUGH-HOLE

Simplifies the soldering process and provides a secure connection in circuit board assembly.

No. of Terminals: 3

Simple configuration with fewer terminals for straightforward circuit connections.

Maximum Power Dissipation (Abs): 40 W

High power handling capability for demanding applications.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting onto a PCB or heatsink for efficient heat dissipation.

Maximum Power Dissipation Ambient: 40 W

Capable of handling high power dissipation even in ambient conditions, ensuring reliability.

Minimum DC Current Gain (hFE): 8

Provides sufficient current amplification for various circuit applications.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 400 V

Suitable for applications requiring high voltage capabilities.

Transistor Element Material: SILICON

Provides good performance characteristics and reliability compared to other materials.

Maximum Collector Current (IC): 1.5 A

Capable of handling moderate current loads for various applications.

Maximum Turn Off Time (toff): 4700 ns

Fast turn-off time for efficient switching operations and minimal power loss.

Terminal Finish: Matte Tin (Sn)

Ensures good conductivity and solderability for reliable connections.

Terminal Position: SINGLE

Simplified design for easier circuit integration and connection.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST13003-A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

40 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

4700 ns

Maximum VCEsat:

3 V

Trade Compliance

ST13003-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19