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2STW100

STMicroelectronics

2STW100 by STMicroelectronics

2STW100 by STMicroelectronics is a powerful NPN Darlington transistor designed for switching applications. It features a max power dissipation of 130 W, a collector current of 25 A, and operates up to 150 °C. Ideal for high-efficiency circuits with robust performance.

Median Price

$3.380

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 194 parts In-Stock

1+ parts

$3.380

100+ parts

$1.860

1k+ parts

$1.524

10k+ parts

-

194

$3.380

$1.860

$1.524

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,833 parts In-Stock

1+ parts

$2.736

100+ parts

-

1k+ parts

-

10k+ parts

-

4,833

$2.736

-

-

-

Vyrian

USA . 6,175 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,175

-

-

-

-

Anansix

USA . 121 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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121

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 375 parts In-Stock

1+ parts

$0.807

100+ parts

-

1k+ parts

$0.726

10k+ parts

-

375

$0.807

-

$0.726

-

MKK Technologies

India . 2,013 parts In-Stock

1+ parts

$1.517

100+ parts

-

1k+ parts

-

10k+ parts

-

2,013

$1.517

-

-

-

DigiPath Technology Company

USA . 2,013 parts In-Stock

1+ parts

$1.517

100+ parts

-

1k+ parts

-

10k+ parts

-

2,013

$1.517

-

-

-

Corphita

USA . 2,528 parts In-Stock

1+ parts

$2.592

100+ parts

-

1k+ parts

-

10k+ parts

-

2,528

$2.592

-

-

-

Northwest PG Solutions

USA . 470 parts In-Stock

1+ parts

$2.761

100+ parts

-

1k+ parts

-

10k+ parts

-

470

$2.761

-

-

-

Microchip USA

USA . 7,929 parts In-Stock

1+ parts

$18.525

100+ parts

-

1k+ parts

-

10k+ parts

-

7,929

$18.525

-

-

-

Alle Elektronik GmbH

Germany . 2,995 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,995

-

-

-

-

Parana Technologies

USA . 2,351 parts In-Stock

1+ parts

-

100+ parts

$0.965

1k+ parts

-

10k+ parts

-

2,351

-

$0.965

-

-

Perfect Parts

USA . 2,032 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,032

-

-

-

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Robosynatics

Brazil . 1,755 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,755

-

-

-

-

Lucentia Tech

USA . 1,755 parts In-Stock

1+ parts

-

100+ parts

$1.066

1k+ parts

$0.987

10k+ parts

$0.987

1,755

-

$1.066

$0.987

$0.987

Native Components

USA . 892 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.435

10k+ parts

-

892

-

-

$2.435

-

Overview

Unlock unparalleled performance with the 2STW100 from STMicroelectronics, a leading name in power solutions. This high-quality NPN Darlington transistor, designed for efficient switching applications, boasts an impressive current gain and robust power handling capabilities. With its durable plastic epoxy package and through-hole mounting, it’s perfect for various electronics projects. Elevate your designs with reliability and efficiency—choose STMicroelectronics for exceptional quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides excellent protection against moisture and mechanical stress, ensuring durability in various environments.

Polarity or Channel Type: NPN

As an NPN transistor, it allows for efficient switching and amplification, making it suitable for a wide range of applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers extremely high current gain and built-in components simplify circuit design by reducing the need for external components.

Transistor Application: SWITCHING

Designed primarily for switching purposes, this transistor ensures fast operation which is crucial for effective control in electronic circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package facilitates efficient PCB design and component placement, optimizing space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and stable connections in circuit boards, enhancing reliability.

No. of Terminals: 3

Having three terminals simplifies the integration process into circuits, making it easy to connect and implement in diverse applications.

Maximum Power Dissipation (Abs): 130 W

A high maximum power dissipation rating indicates the transistor can handle large amounts of power, making it ideal for high-performance applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers enhanced mounting stability, making it suitable for applications where physical attachment is critical.

Minimum DC Current Gain (hFE): 300

A minimum current gain of 300 ensures efficient amplification, allowing for better performance in circuit designs.

Maximum Operating Temperature: 150 °C

Operating at high temperatures allows for greater flexibility and versatility in various environmental conditions without risk of failure.

Maximum Collector-Emitter Voltage: 80 V

With a collector-emitter voltage of 80 V, this transistor is suitable for various high-voltage applications, providing strong performance.

Transistor Element Material: SILICON

Silicon construction offers excellent thermal stability and performance characteristics, making it a reliable choice for various electronic applications.

Maximum Collector Current (IC): 25 A

Handling a maximum collector current of 25 A enables this transistor to efficiently manage high-power loads in electrical circuits.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures good solderability and corrosion resistance, enhancing the longevity and reliability of electrical connections.

Terminal Position: SINGLE

A single terminal position simplifies the design process and reduces complexity in circuit layouts, ensuring ease of use.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STW100 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2STW100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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