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2STW1695

STMicroelectronics

2STW1695 by STMicroelectronics

2STW1695 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 100 W, operates up to 150 °C, and supports collector-emitter voltages of 140 V. Ideal for high-performance electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Vyrian

USA . 3,461 parts In-Stock

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Digiode

USA . 2,105 parts In-Stock

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Anansix

USA . 1,909 parts In-Stock

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Lakeland Logistics Inc

USA . 1,200 parts In-Stock

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Bristol Electronics

USA . 1,200 parts In-Stock

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Zilex Electronics Inc.

Canada . 610 parts In-Stock

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R&J Components

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ACDS - Activité Composants Distribution Service

France . 390 parts In-Stock

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Dan-Mar Components

USA . 390 parts In-Stock

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IDEA Electronic Components Group

UK . 36 parts In-Stock

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$0.333

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$0.300

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36

$0.333

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MKK Technologies

India . 559 parts In-Stock

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$0.626

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DigiPath Technology Company

USA . 559 parts In-Stock

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Native Components

USA . 903 parts In-Stock

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$1.511

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Northwest PG Solutions

USA . 792 parts In-Stock

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$1.663

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AZTECH Wire

Italy . 721 parts In-Stock

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$21.250

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Alle Elektronik GmbH

Germany . 4,083 parts In-Stock

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Corphita

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Perfect Parts

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Parana Technologies

USA . 1,509 parts In-Stock

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$0.398

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Overview

Unlock superior performance with the 2STW1695 from STMicroelectronics, a trusted name in power solutions. This PNP bipolar junction transistor excels in switching applications, offering reliability and efficiency in demanding environments. With its robust design and exceptional thermal characteristics, it ensures longevity and stability. Ideal for automotive, industrial, and consumer electronics, the 2STW1695 empowers your innovations with quality you can depend on.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and resistance to environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for better performance in certain circuit designs, especially in switching applications.

Configuration: SINGLE

A single transistor design simplifies the circuit and reduces potential points of failure, enhancing reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control larger currents and voltages in electronic circuits.

Package Shape: RECTANGULAR

The rectangular package shape provides effective space utilization and ease of mounting in electronic assemblies.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure a robust connection to PCBs, improving stability during operation and physical handling.

No. of Terminals: 3

Having three terminals allows for easy integration into circuits, providing necessary connections for power and signal control.

Maximum Power Dissipation (Abs): 100 W

A high power dissipation capability enables this transistor to handle substantial loads without overheating, making it suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides secure mounting, which is important for reliable operation in environments with vibration or movement.

Minimum DC Current Gain (hFE): 50

A minimum hFE of 50 allows for efficient amplification of signals, making it ideal for switching and amplification tasks.

Maximum Operating Temperature: 150 °C

The transistor's ability to operate at a high temperature of 150 °C ensures reliability in demanding thermal conditions, extending its application range.

Maximum Collector-Emitter Voltage: 140 V

A maximum voltage rating of 140 V allows this transistor to be used in high-voltage applications, broadening its usability.

Transistor Element Material: SILICON

Silicon as the transistor element material ensures good performance characteristics including low leakage current and high breakdown voltage.

Maximum Collector Current (IC): 10 A

With a maximum collector current of 10 A, this transistor can handle substantial loads, making it suitable for various high-power applications.

Terminal Finish: TIN

Tin terminal finish guarantees good solderability and corrosion resistance, ensuring a reliable connection in electronic devices.

Terminal Position: SINGLE

The single terminal position simplifies layout design and integration into circuits, promoting ease of use.

Nominal Transition Frequency (fT): 20 MHz

A transition frequency of 20 MHz allows the transistor to operate effectively in high-speed applications, improving performance in fast-switching circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STW1695 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STW1695 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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