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2STW4466

STMicroelectronics

2STW4466 by STMicroelectronics

2STW4466 by STMicroelectronics is a powerful NPN BJT designed for amplifier applications. It features a max power dissipation of 60 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for high-performance electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,631 parts In-Stock

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5,631

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Digiode

USA . 3,685 parts In-Stock

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Anansix

USA . 2,175 parts In-Stock

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2,175

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Lakeland Logistics Inc

USA . 1,800 parts In-Stock

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1,800

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Bristol Electronics

USA . 1,800 parts In-Stock

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1,800

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R&J Components

USA . 1,686 parts In-Stock

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Zilex Electronics Inc.

Canada . 1,150 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 692 parts In-Stock

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$0.031

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$0.030

692

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$0.030

Ampacity Inc.

Singapore . 743 parts In-Stock

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$0.050

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743

$0.050

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IDEA Electronic Components Group

UK . 1,011 parts In-Stock

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$0.378

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$0.340

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$0.378

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MKK Technologies

India . 1,812 parts In-Stock

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$0.711

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DigiPath Technology Company

USA . 1,812 parts In-Stock

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$0.711

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AZTECH Wire

Italy . 1,145 parts In-Stock

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$11.410

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Component Stockers USA

USA . 699 parts In-Stock

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$99.990

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Alle Elektronik GmbH

Germany . 1,276 parts In-Stock

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Corphita

USA . 1,004 parts In-Stock

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Parana Technologies

USA . 748 parts In-Stock

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$0.452

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Northwest PG Solutions

USA . 517 parts In-Stock

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Perfect Parts

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Overview

Unlock the power of innovation with the 2STW4466 from STMicroelectronics—a trusted leader in semiconductor solutions. This high-performance NPN transistor excels in amplifier applications, delivering reliability and efficiency to your designs. With a robust plastic/epoxy package, it thrives in demanding environments up to 150 °C. Choose the 2STW4466 for its exceptional quality, ensuring durability and superior performance—perfect for enhancing your electronic projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides durability and resistance to environmental factors, ensuring longevity and reliability in various applications.

Polarity or Channel Type: NPN

As an NPN transistor, it is suitable for a wide range of amplifier configurations and offers better performance in common emitter configurations.

Configuration: SINGLE

A single configuration simplifies circuit design, making it easy to integrate into existing systems without complexity.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor excels in signal enhancement, making it ideal for audio and radio frequency applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on printed circuit boards, facilitating easier assembly and integration.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical connections, ensuring stability and reliability in various mounting environments.

No. of Terminals: 3

Having three terminals simplifies the design and ensures ease of use for various circuit configurations.

Maximum Power Dissipation (Abs): 60 W

With a power dissipation capability of 60W, this transistor can handle substantial power loads, making it suitable for high-performance applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides additional mounting stability, making it suitable for environments where vibration may be a concern.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures efficient amplification, allowing for greater output from smaller input signals.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to function effectively in more extreme conditions, enhancing its versatility.

Maximum Collector-Emitter Voltage: 80 V

An 80V rating for collector-emitter voltage makes this transistor viable for various applications that require higher voltage handling.

Transistor Element Material: SILICON

Silicon as the element material provides excellent electrical properties, ensuring efficient performance in switching and amplification.

Maximum Collector Current (IC): 6 A

A collector current rating of 6A makes this transistor suitable for high-current applications, increasing its usability across a range of designs.

Terminal Position: SINGLE

Having a single terminal position simplifies connectivity and reduces the possibility of misconnecting in a circuit.

Nominal Transition Frequency (fT): 20 MHz

With a transition frequency of 20 MHz, this transistor effectively supports high-speed switching and is suitable for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STW4466 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STW4466 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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