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2STW4468

STMicroelectronics

2STW4468 by STMicroelectronics

2STW4468 by STMicroelectronics is an NPN BJT designed for amplifier applications. It features a max power dissipation of 100 W, a collector-emitter voltage of 140 V, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

Median Price

$1.529

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,316 parts In-Stock

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Anansix

USA . 2,122 parts In-Stock

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Digiode

USA . 1,215 parts In-Stock

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Lakeland Logistics Inc

USA . 1,080 parts In-Stock

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1,080

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Bristol Electronics

USA . 1,080 parts In-Stock

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$1.529

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$1.343

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1,080

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$1.529

$1.343

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ACDS - Activité Composants Distribution Service

France . 448 parts In-Stock

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Dan-Mar Components

USA . 448 parts In-Stock

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Zilex Electronics Inc.

Canada . 40 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,419 parts In-Stock

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$0.419

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$0.377

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1,419

$0.419

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MKK Technologies

India . 1,658 parts In-Stock

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$0.787

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1,658

$0.787

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DigiPath Technology Company

USA . 1,658 parts In-Stock

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$0.787

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$0.787

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Corohmni

South Africa . 62 parts In-Stock

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$1.169

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Native Components

USA . 116 parts In-Stock

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$1.173

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Northwest PG Solutions

USA . 111 parts In-Stock

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$1.290

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AZTECH Wire

Italy . 97 parts In-Stock

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$16.820

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QUARKTWIN TECHNOLOGY LTD

USA . 15,498 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,057 parts In-Stock

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Parana Technologies

USA . 1,742 parts In-Stock

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$0.500

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Corphita

USA . 1,679 parts In-Stock

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Perfect Parts

USA . 160 parts In-Stock

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A-Z Elektronik GmbH

Germany . 132 parts In-Stock

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Overview

Unlock superior performance with the 2STW4468 from STMicroelectronics, a trusted leader in semiconductor innovation. Designed for amplifying applications, this robust NPN transistor combines exceptional power handling and reliability, ensuring your circuits operate flawlessly even under demanding conditions. With its high efficiency and durable construction, the 2STW4468 is perfect for enhancing audio systems, industrial controls, and more—delivering maximum value to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides excellent insulation and durability, making the transistor reliable for various applications.

Polarity or Channel Type: NPN

An NPN transistor allows for easy interfacing with digital circuits, offering flexible configurations for amplifying and switching applications.

Configuration: SINGLE

A single configuration simplifies circuit design while ensuring compactness, making it suitable for space-constrained applications.

Transistor Application: AMPLIFIER

Designed for amplification, this transistor is ideal for audio and signal processing applications where boosting signal strength is crucial.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of PCB space and easy mounting on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical stability and are ideal for prototyping and high-power applications.

No. of Terminals: 3

A three-terminal configuration is standard for BJTs, facilitating easy integration in most electronic designs.

Maximum Power Dissipation (Abs): 100 W

With a power dissipation of 100 W, this transistor can handle high-load conditions, making it suitable for high-power amplification.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for enhanced heat dissipation, which is critical for high-performance applications.

Minimum DC Current Gain (hFE): 50

A minimum current gain of 50 ensures sufficient amplification, enabling effective signal processing.

Maximum Operating Temperature: 150 °C

With a high operating temperature limit, this transistor can perform reliably in harsh environments without failure.

Maximum Collector-Emitter Voltage: 140 V

A collector-emitter voltage rating of 140 V provides versatility in applications requiring higher voltage levels.

Transistor Element Material: SILICON

Silicon material technology provides excellent performance metrics and is widely used in the semiconductor industry.

Maximum Collector Current (IC): 10 A

A collector current rating of 10 A enables the transistor to drive heavy loads, making it useful in power management applications.

Terminal Finish: TIN

The tin terminal finish provides good solderability, ensuring reliable connections during assembly and operation.

Terminal Position: SINGLE

Single terminal positioning simplifies device complexity and enhances layout flexibility on the PCB.

Nominal Transition Frequency (fT): 20 MHz

A transition frequency of 20 MHz makes this transistor suitable for RF applications and ensures fast switching capabilities.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STW4468 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-247AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STW4468 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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