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2STW200

STMicroelectronics

2STW200 by STMicroelectronics

2STW200 by STMicroelectronics is a PNP Darlington BJT designed for switching applications. It features a max power dissipation of 130 W, a min DC current gain (hFE) of 300, and operates up to 150 °C. Ideal for high-power circuits with an 80 V collector-emitter voltage.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,487 parts In-Stock

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3,487

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Anansix

USA . 2,619 parts In-Stock

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2,619

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Digiode

USA . 493 parts In-Stock

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493

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,607 parts In-Stock

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$0.442

100+ parts

-

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$0.397

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1,607

$0.442

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$0.397

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MKK Technologies

India . 830 parts In-Stock

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$0.830

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830

$0.830

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DigiPath Technology Company

USA . 830 parts In-Stock

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$0.830

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830

$0.830

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Native Components

USA . 830 parts In-Stock

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$1.511

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830

$1.511

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Northwest PG Solutions

USA . 744 parts In-Stock

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$1.663

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744

$1.663

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AZTECH Wire

Italy . 397 parts In-Stock

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$15.680

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397

$15.680

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Alle Elektronik GmbH

Germany . 3,512 parts In-Stock

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3,512

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Corphita

USA . 1,492 parts In-Stock

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Parana Technologies

USA . 1,297 parts In-Stock

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$0.528

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1,297

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$0.528

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Perfect Parts

USA . 1,173 parts In-Stock

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Overview

Unlock the power of efficiency with the 2STW200 by STMicroelectronics. Renowned for their commitment to quality, STMicroelectronics delivers a robust PNP Darlington transistor designed for seamless switching applications. With its exceptional power handling and thermal resilience, the 2STW200 ensures reliable performance in demanding environments. Elevate your designs with this versatile solution that combines durability and high gain, empowering your projects to achieve unmatched reliability and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making the product suitable for various applications.

Polarity or Channel Type: PNP

A PNP configuration allows for versatile circuit design, particularly in applications requiring a common-emitter configuration.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration enhances current gain, while the built-in diode and resistor improve circuit stability and functionality.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor can efficiently control high power loads, making it ideal for power management.

Package Shape: RECTANGULAR

The rectangular package shape ensures efficient space utilization on circuit boards, facilitating easy integration into various designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals allow for robust mechanical and electrical connections, providing increased reliability in various applications.

No. of Terminals: 3

Having three terminals simplifies circuit design while providing essential connections for the emitter, base, and collector.

Maximum Power Dissipation (Abs): 130 W

A high power dissipation rating of 130 W indicates the transistor’s capability to handle considerable power, making it suitable for high-performance applications.

Package Style (Meter): FLANGE MOUNT

Flange mounting style provides excellent thermal management and support, contributing to improved reliability and performance in demanding environments.

Minimum DC Current Gain (hFE): 300

With a minimum current gain of 300, this transistor exhibits excellent amplification characteristics, making it effective for signal processing applications.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures (up to 150 °C) ensures that the transistor can function in extreme conditions, enhancing its versatility.

Maximum Collector-Emitter Voltage: 80 V

A collector-emitter voltage rating of 80 V allows integration into high-voltage applications, providing flexibility in design.

Transistor Element Material: SILICON

Silicon as the semiconductor material offers excellent performance characteristics, longevity, and consistent operation.

Maximum Collector Current (IC): 25 A

With a maximum collector current rating of 25 A, this transistor is capable of driving significant loads effectively.

Terminal Finish: MATTE TIN

A matte tin finish improves solderability and corrosion resistance, resulting in better overall reliability in electronic assemblies.

Terminal Position: SINGLE

The single terminal position provides straightforward and uncomplicated integration in circuit designs, enhancing user-friendliness.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STW200 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2STW200 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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