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BUL804

STMicroelectronics

BUL804 by STMicroelectronics

BUL804 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages up to 450V. Ideal for high-power circuits with through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,024 parts In-Stock

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5,024

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Anansix

USA . 1,043 parts In-Stock

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1,043

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Digiode

USA . 618 parts In-Stock

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618

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Cyclops Electronics Ltd

UK . 328 parts In-Stock

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328

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ComSIT Distribution GmbH

Germany . 190 parts In-Stock

1+ parts

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190

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ComSIT USA

USA . 190 parts In-Stock

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190

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 336 parts In-Stock

1+ parts

$0.112

100+ parts

-

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-

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$0.108

336

$0.112

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-

$0.108

Northwest PG Solutions

USA . 1,568 parts In-Stock

1+ parts

$0.123

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-

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$0.109

1,568

$0.123

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$0.109

IDEA Electronic Components Group

UK . 653 parts In-Stock

1+ parts

$1.531

100+ parts

-

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$1.378

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653

$1.531

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$1.378

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MKK Technologies

India . 919 parts In-Stock

1+ parts

$2.879

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919

$2.879

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DigiPath Technology Company

USA . 919 parts In-Stock

1+ parts

$2.879

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919

$2.879

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AZTECH Wire

Italy . 176 parts In-Stock

1+ parts

$11.230

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176

$11.230

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Ampacity Inc.

Singapore . 1,338 parts In-Stock

1+ parts

$26.050

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1,338

$26.050

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Corphita

USA . 3,743 parts In-Stock

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3,743

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Parana Technologies

USA . 1,773 parts In-Stock

1+ parts

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$1.830

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1,773

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$1.830

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Robosynatics

Brazil . 900 parts In-Stock

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900

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Lucentia Tech

USA . 900 parts In-Stock

1+ parts

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100+ parts

$0.758

1k+ parts

$0.702

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$0.702

900

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$0.758

$0.702

$0.702

Kepictronics

USA . 164 parts In-Stock

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164

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Overview

Unlock the potential of your designs with the BUL804 from STMicroelectronics, a trusted leader in advanced semiconductor solutions. This robust NPN power transistor excels in switching applications, delivering unmatched reliability and performance under demanding conditions. With its durable plastic/epoxy package and impressive power dissipation, you’ll benefit from enhanced efficiency and longevity. Elevate your projects with the quality assurance and innovation that only STMicroelectronics can provide!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body ensures durability and reliable performance, making this BJT suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for efficient switching characteristics, which is ideal in many electronic circuits.

Configuration: SINGLE

A single configuration simplifies the design and integration into electronic circuits, enhancing ease of use.

Transistor Application: SWITCHING

Designed specifically for switching applications, this BJT offers improved efficiency and response time in circuit operations.

Package Shape: RECTANGULAR

The rectangular package shape aids in space-efficient designs, making it easier to fit into compact circuits.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides reliable mechanical and electrical connections, easy for soldering onto circuit boards.

No. of Terminals: 3

With three terminals, this BJT offers the necessary connections for optimal operation in most circuit configurations.

Maximum Power Dissipation (Abs): 70 W

A maximum power dissipation of 70 W allows for versatile use in high-power applications without risk of damage.

Package Style (Meter): FLANGE MOUNT

Flange mount style facilitates stable mounting, improving reliability in various environments.

Minimum DC Current Gain (hFE): 10

A minimum DC current gain of 10 ensures sufficient amplification, contributing to the efficiency of signal processing.

Maximum Operating Temperature: 150 °C

The ability to operate at up to 150 °C ensures reliability in harsh environments and extends the product's application range.

Maximum Collector-Emitter Voltage: 450 V

With a maximum collector-emitter voltage of 450 V, this BJT supports high-voltage applications, making it very versatile.

Transistor Element Material: SILICON

Silicon as the element material enhances performance and reliability, commonly preferred in the semiconductor industry.

Maximum Collector Current (IC): 4 A

A maximum collector current of 4 A allows this transistor to handle substantial loads, ideal for power applications.

Terminal Finish: Matte Tin (Sn)

The matte tin finish offers enhanced solderability and corrosion resistance, ensuring long-lasting connections.

Terminal Position: SINGLE

The single terminal position simplifies the layout and design of the circuit, making integration straightforward.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL804 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL804 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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