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BUL805

STMicroelectronics

BUL805 by STMicroelectronics

BUL805 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages of 450V. Ideal for high-performance electronic circuits.

Median Price

$0.620

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,836 parts In-Stock

1+ parts

$0.620

100+ parts

$0.375

1k+ parts

$0.267

10k+ parts

$0.267

1,836

$0.620

$0.375

$0.267

$0.267

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,758 parts In-Stock

1+ parts

$0.589

100+ parts

-

1k+ parts

-

10k+ parts

-

1,758

$0.589

-

-

-

Vyrian

USA . 2,160 parts In-Stock

1+ parts

$0.620

100+ parts

-

1k+ parts

-

10k+ parts

-

2,160

$0.620

-

-

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Anansix

USA . 2,639 parts In-Stock

1+ parts

-

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2,639

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 91 parts In-Stock

1+ parts

$0.489

100+ parts

-

1k+ parts

$0.440

10k+ parts

-

91

$0.489

-

$0.440

-

Corphita

USA . 1,859 parts In-Stock

1+ parts

$0.558

100+ parts

-

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-

10k+ parts

-

1,859

$0.558

-

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Component Stockers USA

USA . 2,336 parts In-Stock

1+ parts

$0.600

100+ parts

$0.360

1k+ parts

$0.260

10k+ parts

-

2,336

$0.600

$0.360

$0.260

-

MKK Technologies

India . 555 parts In-Stock

1+ parts

$0.919

100+ parts

-

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555

$0.919

-

-

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DigiPath Technology Company

USA . 555 parts In-Stock

1+ parts

$0.919

100+ parts

-

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-

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555

$0.919

-

-

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Microchip USA

USA . 289 parts In-Stock

1+ parts

$4.290

100+ parts

-

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289

$4.290

-

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Andel Nordic

Denmark . 5,119 parts In-Stock

1+ parts

$4.595

100+ parts

-

1k+ parts

$4.411

10k+ parts

$4.411

5,119

$4.595

-

$4.411

$4.411

Kepictronics

USA . 10,000 parts In-Stock

1+ parts

-

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10,000

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A-Z Elektronik GmbH

Germany . 5,921 parts In-Stock

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5,921

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Alle Elektronik GmbH

Germany . 3,947 parts In-Stock

1+ parts

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3,947

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Perfect Parts

USA . 2,101 parts In-Stock

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2,101

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Parana Technologies

USA . 1,281 parts In-Stock

1+ parts

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100+ parts

$0.584

1k+ parts

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1,281

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$0.584

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Northwest PG Solutions

USA . 710 parts In-Stock

1+ parts

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710

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Native Components

USA . 322 parts In-Stock

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322

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Overview

Unlock exceptional performance with the BUL805 from STMicroelectronics, a trusted name in power solutions. This NPN transistor excels in switching applications, ensuring high efficiency and reliability in your designs. With its robust plastic/epoxy package and impressive power handling up to 80W, the BUL805 is perfect for diverse industries, from automotive to consumer electronics. Experience superior quality and peace of mind knowing you’re backed by a leading manufacturer dedicated to innovation and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and resistance to environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration is known for its versatility in digital and analog circuits, allowing for efficient signal amplification and switching.

Configuration: SINGLE

A single configuration simplifies circuit design, making it easier to integrate into various electronic applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor is ideal for controlling higher currents, making it suitable for power management circuits.

Package Shape: RECTANGULAR

The rectangular package shape aids in efficient layout and may help in heat dissipation, which is crucial for high-power applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical and electrical connections, enhancing reliability in assembled circuits.

No. of Terminals: 3

Three terminals enable versatile circuit configurations while maintaining simplicity in device integration.

Maximum Power Dissipation (Abs): 80 W

With a maximum power dissipation of 80 W, this transistor can handle substantial power loads, making it reliable for high-performance applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style ensures secure attachment to printed circuit boards, maximizing stability during operation.

Minimum DC Current Gain (hFE): 10

A minimum hFE of 10 indicates decent amplification capability, allowing for effective control of output currents in various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C enhances thermal performance, making this transistor suitable for harsh environments.

Maximum Collector-Emitter Voltage: 450 V

A collector-emitter voltage rating of 450 V allows this transistor to operate in high-voltage applications, providing versatility in design.

Transistor Element Material: SILICON

Silicon as the element material ensures reliable performance and is a standard choice for most electronic components.

Maximum Collector Current (IC): 5 A

With a collector current rating of 5 A, this transistor is capable of driving significant loads, making it suitable for power applications.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish enhances solderability and corrosion resistance, which contributes to a longer device lifespan.

Terminal Position: SINGLE

Single terminal position simplifies integration into circuit boards, streamlining the assembly process.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL805 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL805 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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