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BUL87

STMicroelectronics

BUL87 by STMicroelectronics

BUL87 by STMicroelectronics is a NPN Power BJT with 400V VCE, 12A IC, and 1.5V VCEsat. Ideal for switching applications, it has a max power dissipation of 110W at 150 °C ambient temperature. The transistor comes in a plastic/epoxy package with through-hole terminals and matte tin finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,932 parts In-Stock

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1,932

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Digiode

USA . 642 parts In-Stock

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642

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Resion

USA . 350 parts In-Stock

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350

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Vyrian

USA . 203 parts In-Stock

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203

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 706 parts In-Stock

1+ parts

$1.792

100+ parts

-

1k+ parts

$1.613

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706

$1.792

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$1.613

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MKK Technologies

India . 594 parts In-Stock

1+ parts

$3.370

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594

$3.370

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DigiPath Technology Company

USA . 594 parts In-Stock

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$3.370

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594

$3.370

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Native Components

USA . 739 parts In-Stock

1+ parts

$84.819

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$81.426

739

$84.819

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$81.426

Northwest PG Solutions

USA . 1,247 parts In-Stock

1+ parts

$93.301

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1,247

$93.301

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Corphita

USA . 3,183 parts In-Stock

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3,183

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Parana Technologies

USA . 830 parts In-Stock

1+ parts

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$2.143

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830

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$2.143

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Overview

Unleash the power of innovation with the BUL87 by STMicroelectronics. Crafted with precision and expertise, this Power Bipolar Junction Transistor offers unmatched performance in switching applications. From its durable plastic/epoxy package body to its NPN polarity, this product is designed for excellence. With a maximum VCEsat of 1.5V and a maximum power dissipation of 90W, the BUL87 delivers reliable and efficient operation. Experience seamless functionality and superior quality with STMicroelectronics' BUL87 - the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in design.

Configuration: SINGLE

Simplifies circuit design and installation, ideal for applications that require a single transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Maximum VCEsat: 1.5 V

Low saturation voltage helps reduce power dissipation and improve overall efficiency.

Package Shape: RECTANGULAR

Easily mountable and compact design for efficient PCB layout and space-saving.

Terminal Form: THROUGH-HOLE

Facilitates easy connections on a PCB and offers mechanical stability.

No. of Terminals: 3

Simplified connection interface with fewer terminals, suitable for basic circuits.

Maximum Power Dissipation (Abs): 90 W

High power dissipation capability allows for handling high load conditions without overheating.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting on a heat sink, improving thermal dissipation capabilities.

Maximum Power Dissipation Ambient: 110 W

Can handle higher ambient temperatures without compromising performance or reliability.

Minimum DC Current Gain (hFE): 8

Ensures consistent performance and reliable switching characteristics within the specified range.

Maximum Operating Temperature: 150 °C

Suitable for operation in high-temperature environments, offering versatility in usage.

Maximum Collector-Emitter Voltage: 400 V

Can withstand high voltage applications, providing flexibility in circuit design.

Transistor Element Material: SILICON

Offers high performance and reliability, commonly used in power electronics applications.

Maximum Collector Current (IC): 12 A

High collector current rating allows for handling larger loads with ease.

Maximum Turn Off Time (toff): 3565 ns

Fast turn-off time ensures efficient switching operations and minimizes power losses.

Terminal Finish: MATTE TIN

Provides a reliable contact surface for soldering, ensuring secure electrical connections.

Terminal Position: SINGLE

Simplified terminal layout for easy installation and maintenance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL87 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

110 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

3565 ns

Maximum VCEsat:

1.5 V

Trade Compliance

BUL87 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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