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BUL85D

STMicroelectronics

BUL85D by STMicroelectronics

BUL85D by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for robust electronic circuits with through-hole mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,483 parts In-Stock

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4,483

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Digiode

USA . 1,762 parts In-Stock

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1,762

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Anansix

USA . 641 parts In-Stock

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641

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 46 parts In-Stock

1+ parts

$0.212

100+ parts

-

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$0.204

46

$0.212

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-

$0.204

Northwest PG Solutions

USA . 1,231 parts In-Stock

1+ parts

$0.233

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-

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$0.206

1,231

$0.233

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$0.206

IDEA Electronic Components Group

UK . 648 parts In-Stock

1+ parts

$1.535

100+ parts

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$1.381

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648

$1.535

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$1.381

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MKK Technologies

India . 1,130 parts In-Stock

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$2.886

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1,130

$2.886

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DigiPath Technology Company

USA . 1,130 parts In-Stock

1+ parts

$2.886

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1,130

$2.886

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Kepictronics

USA . 56,000 parts In-Stock

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56,000

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RC Electronics

USA . 26,743 parts In-Stock

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26,743

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A-Z Elektronik GmbH

Germany . 7,427 parts In-Stock

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7,427

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Alle Elektronik GmbH

Germany . 4,951 parts In-Stock

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4,951

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Corphita

USA . 1,869 parts In-Stock

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1,869

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Parana Technologies

USA . 627 parts In-Stock

1+ parts

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$1.835

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627

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$1.835

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Overview

Experience unmatched performance and reliability with the BUL85D from STMicroelectronics, a leader in cutting-edge semiconductor solutions. This power BJT excels in switching applications, delivering robust efficiency and durability in demanding environments. With its built-in diode and high power dissipation capability, it’s perfect for your next project. Trust in STMicroelectronics’ quality to elevate your designs and drive innovation forward!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and enhances the thermal stability of the transistor, making it suitable for demanding applications.

Polarity or Channel Type: NPN

NPN configuration allows for efficient switching and amplification, making it ideal for various electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances protection against reverse polarity and improves circuit reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle rapid on-off signals effectively.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easy PCB layout and mechanical stability in circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust connections and are suitable for high-power applications where vibration resistance is needed.

No. of Terminals: 3

With three terminals, this transistor offers a simple integration in various circuit designs while allowing for easy wiring.

Maximum Power Dissipation (Abs): 80 W

A high maximum power dissipation rating enables the transistor to handle significant thermal loads, enhancing its reliability in high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style helps in securing the transistor firmly on the PCB, improving heat dissipation and stability.

Minimum DC Current Gain (hFE): 4

The minimum hFE of 4 ensures sufficient amplification for low-power signal applications, making it versatile.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows this transistor to function reliably in challenging thermal environments.

Maximum Collector-Emitter Voltage: 250 V

Capable of handling high voltage, this transistor is suitable for applications requiring robust voltage control.

Transistor Element Material: SILICON

Silicon is a well-known semiconductor material that offers excellent performance and reliability in diverse conditions.

Maximum Collector Current (IC): 8 A

A maximum collector current of 8 A enables this transistor to be used in high-current applications, enhancing its versatility.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and helps prevent oxidation, contributing to the longevity of the connections.

Terminal Position: SINGLE

The single terminal position simplifies integration into circuits, ensuring ease of use in designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL85D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

250 V

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL85D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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