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BUL89

STMicroelectronics

BUL89 by STMicroelectronics

BUL89 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 110W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

Median Price

$2.750

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 37 parts In-Stock

1+ parts

$1.120

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-

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37

$1.120

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DigiKey

USA . 441 parts In-Stock

1+ parts

$3.440

100+ parts

$1.593

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-

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441

$3.440

$1.593

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Verical

USA . 37 parts In-Stock

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-

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$2.750

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37

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$2.750

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Distributors (In-Stock)

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Digiode

USA . 2,950 parts In-Stock

1+ parts

$1.340

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2,950

$1.340

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Vyrian

USA . 6,472 parts In-Stock

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6,472

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Anansix

USA . 1,598 parts In-Stock

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1,598

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ACDS - Activité Composants Distribution Service

France . 559 parts In-Stock

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559

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Bristol Electronics

USA . 559 parts In-Stock

1+ parts

-

100+ parts

$1.332

1k+ parts

$1.170

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-

559

-

$1.332

$1.170

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Dan-Mar Components

USA . 559 parts In-Stock

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559

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Distributors (Availability)

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Native Components

USA . 186 parts In-Stock

1+ parts

$0.131

100+ parts

-

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-

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$0.126

186

$0.131

-

-

$0.126

Northwest PG Solutions

USA . 1,846 parts In-Stock

1+ parts

$0.144

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-

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$0.127

1,846

$0.144

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-

$0.127

Corphita

USA . 4,756 parts In-Stock

1+ parts

$1.269

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4,756

$1.269

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IDEA Electronic Components Group

UK . 708 parts In-Stock

1+ parts

$1.331

100+ parts

-

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$1.198

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708

$1.331

-

$1.198

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MKK Technologies

India . 2,015 parts In-Stock

1+ parts

$2.503

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2,015

$2.503

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DigiPath Technology Company

USA . 2,015 parts In-Stock

1+ parts

$2.503

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2,015

$2.503

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Microchip USA

USA . 369 parts In-Stock

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$20.150

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369

$20.150

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QUARKTWIN TECHNOLOGY LTD

USA . 20,587 parts In-Stock

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20,587

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Perfect Parts

USA . 5,144 parts In-Stock

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5,144

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Metaverse IC Inc.

Canada . 1,470 parts In-Stock

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1,470

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Parana Technologies

USA . 1,038 parts In-Stock

1+ parts

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100+ parts

$1.592

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1,038

-

$1.592

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Robosynatics

Brazil . 950 parts In-Stock

1+ parts

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950

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Lucentia Tech

USA . 950 parts In-Stock

1+ parts

-

100+ parts

$1.929

1k+ parts

$1.786

10k+ parts

$1.786

950

-

$1.929

$1.786

$1.786

Alle Elektronik GmbH

Germany . 523 parts In-Stock

1+ parts

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523

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Overview

Elevate your power management solutions with the BUL89 from STMicroelectronics, a trusted leader in innovation. This robust NPN transistor is designed for efficient switching applications, offering remarkable reliability and performance. With its high power dissipation and wide operating temperature range, the BUL89 ensures seamless operation in demanding environments. Experience enhanced efficiency and peace of mind, knowing you're backed by ST’s commitment to quality and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight materials ensure reliable performance in various environments.

Polarity or Channel Type: NPN

NPN configuration allows for better amplifying and switching capabilities, making it suitable for high-speed applications.

Configuration: SINGLE

A single configuration offers simplicity and reduces space on the circuit board, making it easy to integrate into designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient operation in power control circuits.

Package Shape: RECTANGULAR

Rectangular design facilitates easy placement on PCB and optimum space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical and electrical connections for stable performance.

No. of Terminals: 3

Three terminals support essential connections for effective circuit functionality, allowing for versatile usage.

Maximum Power Dissipation (Abs): 110 W

High power dissipation capability ensures performance under load without overheating, ideal for robust applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides enhanced stability and secure attachment to circuit boards and enclosures.

Minimum DC Current Gain (hFE): 10

A minimum gain of 10 means better amplification efficiency, suitable for a range of electronic applications.

Maximum Operating Temperature: 150 °C

High operating temperature rating allows for use in demanding environments without compromising performance.

Maximum Collector-Emitter Voltage: 400 V

Generous voltage rating provides flexibility in applications, supporting high-voltage circuits.

Transistor Element Material: SILICON

Silicon material offers excellent thermal stability and performance, enhancing the longevity of the device.

Maximum Collector Current (IC): 12 A

Capable of handling up to 12 A of current, suitable for various high-power applications requiring robust current handling.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: SINGLE

Single terminal position design allows for straightforward integration into circuit layouts, making assembly easier.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL89 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL89 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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