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BUL810

STMicroelectronics

BUL810 by STMicroelectronics

BUL810 by STMicroelectronics is a NPN Power BJT transistor with 450V VCE, 15A IC, and 125W power dissipation. Ideal for switching applications, it has a single configuration in a plastic/epoxy package with through-hole terminals. Operating up to 150°C, it offers a fast turn-off time of 2410ns.

Median Price

$1.912

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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Nova Conductors

Japan . 50 parts In-Stock

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$1.912

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Digiode

USA . 2,708 parts In-Stock

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Anansix

USA . 1,501 parts In-Stock

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Chip Stock

USA . 402 parts In-Stock

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Vyrian

USA . 308 parts In-Stock

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VNN

France . 305 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 117 parts In-Stock

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ComSIT Distribution GmbH

Germany . 35 parts In-Stock

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ECAB

Sweden . 17 parts In-Stock

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Elcom Components

USA . 14 parts In-Stock

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LittleDiode

UK . 5 parts In-Stock

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Goldney Electronics S.L.

Spain . 5 parts In-Stock

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GES GmbH

Germany . 2 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 1 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 986 parts In-Stock

1+ parts

$0.733

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$0.660

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986

$0.733

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$0.660

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MKK Technologies

India . 632 parts In-Stock

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$1.379

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DigiPath Technology Company

USA . 632 parts In-Stock

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$1.379

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Continental Prestige Electronics

USA . 3,169 parts In-Stock

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$1.912

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$1.874

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$1.874

Netroflash

USA . 2,000 parts In-Stock

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$1.912

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$1.816

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$1.778

2,000

$1.912

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$1.816

$1.778

Argo Parts USA

USA . 1,960 parts In-Stock

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$1.912

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AZTECH Wire

Italy . 308 parts In-Stock

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$8.048

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Ampacity Inc.

Singapore . 770 parts In-Stock

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$22.050

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Kepictronics

USA . 35,000 parts In-Stock

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Lixinc

USA . 3,156 parts In-Stock

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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Corphita

USA . 1,134 parts In-Stock

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Robosynatics

Brazil . 900 parts In-Stock

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Lucentia Tech

USA . 900 parts In-Stock

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$1.574

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$1.458

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$1.458

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$1.458

$1.458

Parana Technologies

USA . 287 parts In-Stock

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$0.877

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Assy Fe

Spain . 186 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 117 parts In-Stock

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Overview

Unleash the power of innovation with the BUL810 from STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Power Bipolar Junction Transistors for various applications. The BUL810 offers customers reliable performance, efficient switching capabilities, and a maximum collector-emitter voltage of 450V. With a maximum power dissipation of 125W and a minimum DC current gain of 10, this NPN transistor is a game-changer in the world of electronics. Upgrade your projects today with the BUL810 and experience the difference in quality and performance that only STMicroelectronics can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile.

Configuration: SINGLE

Having a single configuration simplifies the design and integration process in electronic circuits.

Transistor Application: SWITCHING

Being specifically designed for switching applications, this transistor can effectively control the flow of current in a circuit.

Maximum VCEsat: 5 V

Having a low VCEsat value means lower power losses and improved efficiency in switching operations.

Package Shape: RECTANGULAR

The rectangular shape allows for easier mounting and connection in electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a stable and reliable connection in a circuit board.

No. of Terminals: 3

Having only 3 terminals simplifies the circuit design and reduces complexity.

Maximum Power Dissipation (Abs): 125 W

With a high power dissipation rating, this transistor can handle large amounts of heat generated during operation.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for easy mounting and secure attachment in electronic systems.

Maximum Power Dissipation Ambient: 125 W

The high ambient power dissipation rating ensures stable performance even in high-temperature environments.

Minimum DC Current Gain (hFE): 10

Having a minimum DC current gain of 10 ensures reliable amplification and switching characteristics.

Maximum Operating Temperature: 150 °C

With a high operating temperature tolerance, this transistor can be used in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 450 V

The high maximum collector-emitter voltage rating allows for the handling of high voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 15 A

With a high collector current rating, this transistor can handle large current flows in a circuit.

Maximum Turn Off Time (toff): 2410 ns

Having a low turn-off time ensures fast switching operation and reduced power losses.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides corrosion resistance and ensures a stable electrical connection.

Terminal Position: SINGLE

Having a single terminal position simplifies the installation and connection process in a circuit board.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL810 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

125 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2410 ns

Maximum VCEsat:

5 V

Trade Compliance

BUL810 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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