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2STBN15D100T4

STMicroelectronics

2STBN15D100T4 by STMicroelectronics

2STBN15D100T4 by STMicroelectronics is a NPN Power BJT with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 12A, and min DC current gain of 750. This transistor comes in a small outline package with gull wing terminals, suitable for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,333 parts In-Stock

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8,333

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VNN

France . 5,632 parts In-Stock

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Digiode

USA . 1,823 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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Anansix

USA . 406 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 829 parts In-Stock

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$0.328

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829

$0.328

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IDEA Electronic Components Group

UK . 1,337 parts In-Stock

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$0.492

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$0.443

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$0.492

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$0.443

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MKK Technologies

India . 70 parts In-Stock

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$0.926

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70

$0.926

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DigiPath Technology Company

USA . 70 parts In-Stock

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$0.926

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70

$0.926

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Corohmni

South Africa . 620 parts In-Stock

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$1.727

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$1.727

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AZTECH Wire

Italy . 193 parts In-Stock

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$14.495

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Ampacity Inc.

Singapore . 406 parts In-Stock

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$26.050

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Semicontronic

India . 817 parts In-Stock

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$59.050

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$57.574

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$57.278

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Alle Elektronik GmbH

Germany . 4,393 parts In-Stock

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Corphita

USA . 3,547 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 1,857 parts In-Stock

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Parana Technologies

USA . 808 parts In-Stock

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$0.588

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$0.588

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Continental Prestige Electronics

USA . 224 parts In-Stock

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Overview

Elevate your power applications with the 2STBN15D100T4 by STMicroelectronics. Crafted with precision and expertise, this Power Bipolar Junction Transistor offers a seamless switching experience. Its NPN polarity and built-in diode and resistor configuration make it a versatile choice for a wide range of projects. With a maximum collector-emitter voltage of 100V and a maximum operating temperature of 150°C, this transistor guarantees optimal performance and reliability. Experience the difference with STMicroelectronics - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile for a variety of circuit designs.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain and the built-in diode and resistor simplify circuit design and reduce component count.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in controlling the flow of current through a circuit.

Maximum Power Dissipation (Abs): 70 W

With a high power dissipation rating, this transistor can handle higher power levels without overheating, making it suitable for high-demand applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, making it ideal for environments where heat dissipation is a concern.

Maximum Collector Current (IC): 12 A

Capable of handling high collector currents, making it suitable for applications that require high current switching.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STBN15D100T4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2STBN15D100T4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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