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2ST1480FP

STMicroelectronics

2ST1480FP by STMicroelectronics

2ST1480FP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 25W, collector-emitter voltage of 80V, and operates up to 150 °C. Ideal for efficient control in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,405 parts In-Stock

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6,405

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Digiode

USA . 3,892 parts In-Stock

1+ parts

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3,892

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Anansix

USA . 2,575 parts In-Stock

1+ parts

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2,575

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,474 parts In-Stock

1+ parts

$0.804

100+ parts

-

1k+ parts

$0.724

10k+ parts

-

1,474

$0.804

-

$0.724

-

MKK Technologies

India . 1,376 parts In-Stock

1+ parts

$1.512

100+ parts

-

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-

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1,376

$1.512

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DigiPath Technology Company

USA . 1,376 parts In-Stock

1+ parts

$1.512

100+ parts

-

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-

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1,376

$1.512

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AZTECH Wire

Italy . 937 parts In-Stock

1+ parts

$10.720

100+ parts

-

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937

$10.720

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Ampacity Inc.

Singapore . 1,251 parts In-Stock

1+ parts

$31.050

100+ parts

-

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1,251

$31.050

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Native Components

USA . 420 parts In-Stock

1+ parts

$162.075

100+ parts

-

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$155.592

420

$162.075

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-

$155.592

Northwest PG Solutions

USA . 414 parts In-Stock

1+ parts

$178.282

100+ parts

-

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414

$178.282

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 19,553 parts In-Stock

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19,553

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Alle Elektronik GmbH

Germany . 4,617 parts In-Stock

1+ parts

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4,617

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Corphita

USA . 3,325 parts In-Stock

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3,325

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Parana Technologies

USA . 293 parts In-Stock

1+ parts

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100+ parts

$0.961

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293

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$0.961

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Overview

Elevate your projects with the 2ST1480FP from STMicroelectronics, a powerhouse in power bipolar junction transistors. Renowned for their reliability and innovation, STMicroelectronics delivers quality that ensures optimal performance in switching applications. With robust construction and proven efficiency, this transistor meets diverse needs from automotive to industrial sectors, providing exceptional value, durability, and peace of mind in every design. Experience the advantage of choosing excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material enhances the reliability and longevity of the transistor in various environments.

Polarity or Channel Type: NPN

NPN configuration is widely used in amplification and switching applications, making it versatile for various electronic designs.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier for engineers to implement.

Transistor Application: SWITCHING

Optimized for switching applications, this BJT offers fast response times, ideal for efficient electronic control.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient heat dissipation and ease of mounting on PCBs.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides better mechanical support and facilitates easier soldering processes.

No. of Terminals: 3

With 3 terminals, this transistor supports straightforward connections, essential for reliable circuit designs.

Maximum Power Dissipation (Abs): 25 W

A high power dissipation rating of 25 W indicates the ability to handle significant power loads, making it suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for stable attachment to heatsinks, enhancing cooling efficiency and overall performance.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures efficient current amplification, which is critical for signal processing.

Maximum Operating Temperature: 150 °C

The high operating temperature of 150 °C enables the device to function in harsh environments without performance degradation.

Maximum Collector-Emitter Voltage: 80 V

With a maximum voltage rating of 80 V, this transistor can handle significant voltage variations, making it versatile for high-voltage applications.

Transistor Element Material: SILICON

Silicon material ensures good efficiency and stability, which are essential for reliable electronic performance.

Maximum Collector Current (IC): 5 A

The ability to handle up to 5 A of collector current makes this transistor suitable for high-power switching applications.

Terminal Finish: MATTE TIN

Matte tin finishes improve solderability and protect against corrosion, contributing to the longevity of electronic connections.

Terminal Position: SINGLE

Single terminal position simplifies integration into circuits, playing a crucial role in efficient layout design.

Case Connection: ISOLATED

Isolated case connection enhances safety by preventing unwanted current paths, ensuring secure circuit operation.

Nominal Transition Frequency (fT): 120 MHz

A nominal transition frequency of 120 MHz indicates high-speed operation capabilities, making it ideal for RF and high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2ST1480FP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2ST1480FP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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