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HD1750JL

STMicroelectronics

HD1750JL by STMicroelectronics

HD1750JL by STMicroelectronics is a powerful NPN BJT designed for amplifiers, featuring a max power dissipation of 200W and an operating temp up to 150 °C. It supports collector-emitter voltages of 800V and handles currents up to 24A. Ideal for high-performance applications in electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,718 parts In-Stock

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7,718

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Digiode

USA . 3,312 parts In-Stock

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3,312

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Anansix

USA . 1,909 parts In-Stock

1+ parts

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1,909

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Lakeland Logistics Inc

USA . 400 parts In-Stock

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400

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Bristol Electronics

USA . 400 parts In-Stock

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400

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 345 parts In-Stock

1+ parts

$0.201

100+ parts

-

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$0.193

345

$0.201

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$0.193

Northwest PG Solutions

USA . 1,942 parts In-Stock

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$0.221

100+ parts

-

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$0.195

1,942

$0.221

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$0.195

IDEA Electronic Components Group

UK . 100 parts In-Stock

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$0.788

100+ parts

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$0.709

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100

$0.788

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$0.709

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MKK Technologies

India . 1,132 parts In-Stock

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$1.481

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1,132

$1.481

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DigiPath Technology Company

USA . 1,132 parts In-Stock

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$1.481

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1,132

$1.481

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AZTECH Wire

Italy . 1,213 parts In-Stock

1+ parts

$10.780

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1,213

$10.780

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Alle Elektronik GmbH

Germany . 3,319 parts In-Stock

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3,319

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Corphita

USA . 1,935 parts In-Stock

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1,935

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Parana Technologies

USA . 1,204 parts In-Stock

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$0.942

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1,204

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$0.942

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Overview

Elevate your design with the HD1750JL from STMicroelectronics, a powerhouse in the world of power transistors. Renowned for their commitment to quality and innovation, STMicroelectronics delivers reliable performance and exceptional value. The HD1750JL excels in amplifier applications, providing robust efficiency and impressive power handling. With its durable construction and high-temperature capabilities, trust in this NPN transistor to drive your projects forward with confidence and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and resistance to environmental factors, making the transistor reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplifying and switching applications, making this product versatile for electronic circuits.

Configuration: SINGLE

The single configuration simplifies integration into circuits, offering ease of use in designs.

Transistor Application: AMPLIFIER

Designed for amplification, this transistor is ideal for audio and signal processing applications, enhancing performance.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient space utilization on circuit boards, making it suitable for compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support, ensuring secure connections in varying conditions.

No. of Terminals: 3

With three terminals, it allows for straightforward connection and versatility in circuit configurations.

Maximum Power Dissipation (Abs): 200 W

A high power dissipation rating ensures the transistor can handle significant power loads, suitable for high-performance applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers flexibility in mounting options, providing adaptability in various setups.

Minimum DC Current Gain (hFE): 5.5

A minimum current gain of 5.5 enhances the transistor's efficiency in amplifying signals, making it effective in driving loads.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance allows the transistor to function reliably in extreme conditions, making it robust for practical applications.

Maximum Collector-Emitter Voltage: 800 V

Withstanding high voltages makes this transistor suitable for high-voltage applications, ensuring longevity and safety.

Transistor Element Material: SILICON

Silicon provides excellent electrical properties, contributing to the overall efficiency and performance of the transistor.

Maximum Collector Current (IC): 24 A

Capable of handling up to 24 A, this transistor is suitable for power applications, ensuring it can drive high loads without failure.

Terminal Finish: MATTE TIN

Matte tin finish enhances corrosion resistance and improves solderability, ensuring long-term reliability and performance.

Terminal Position: SINGLE

Single terminal position simplifies layout and assembly in circuit designs, enhancing usability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) HD1750JL attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

800 V

Configuration:

Minimum DC Current Gain (hFE):

5.5

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

HD1750JL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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