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HD1760JL

STMicroelectronics

HD1760JL by STMicroelectronics

HD1760JL by STMicroelectronics is a powerful NPN BJT designed for amplifiers, featuring a max power dissipation of 200W and an operating temp up to 150 °C. It supports collector-emitter voltages of 800V and handles currents up to 36A. Ideal for high-performance applications in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,111 parts In-Stock

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4,111

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Anansix

USA . 2,044 parts In-Stock

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2,044

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Digiode

USA . 794 parts In-Stock

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794

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IDEA Electronic Components Group

UK . 1,173 parts In-Stock

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$1.028

100+ parts

-

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$0.925

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1,173

$1.028

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$0.925

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MKK Technologies

India . 511 parts In-Stock

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$1.932

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511

$1.932

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DigiPath Technology Company

USA . 511 parts In-Stock

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$1.932

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511

$1.932

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AZTECH Wire

Italy . 1,218 parts In-Stock

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$12.420

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1,218

$12.420

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Alle Elektronik GmbH

Germany . 3,848 parts In-Stock

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3,848

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Parana Technologies

USA . 2,141 parts In-Stock

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$1.229

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$1.229

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Corphita

USA . 1,247 parts In-Stock

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1,247

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Native Components

USA . 582 parts In-Stock

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582

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Northwest PG Solutions

USA . 12 parts In-Stock

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Overview

Unlock exceptional performance with the HD1760JL from STMicroelectronics, a leader in semiconductor technology. This powerful NPN transistor excels in demanding amplifier applications, delivering reliability and efficiency even under extreme conditions. With its robust design and high power dissipation capabilities, it’s perfect for industrial and consumer electronics. Choose HD1760JL for unparalleled quality and innovation that drive your projects to success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package offers effective protection against environmental factors, ensuring the longevity and reliability of the transistor in various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications, making this product a versatile choice for various electronic circuits.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, making it easier to implement in compact applications.

Transistor Application: AMPLIFIER

Designed for amplification, this transistor ensures high-quality signal processing, crucial for audio and RF applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on printed circuit boards, aiding in compact design layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical stability and ease of soldering, ensuring secure connections in the circuit.

No. of Terminals: 3

Featuring three terminals, this transistor is straightforward to integrate into circuit designs, facilitating ease of use.

Maximum Power Dissipation (Abs): 200 W

A high power dissipation rating allows this transistor to handle significant workloads, making it suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides enhanced heat management and sturdiness, ideal for applications requiring substantial thermal management.

Minimum DC Current Gain (hFE): 5

A minimum hFE of 5 indicates decent amplification capability, making it appropriate for a range of signal amplification tasks.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliable performance in harsh environments, enhancing overall durability.

Maximum Collector-Emitter Voltage: 800 V

This high voltage rating allows the transistor to be used in demanding applications, offering versatility in various electronic designs.

Transistor Element Material: SILICON

Silicon-based transistors are known for stability and performance, making them a reliable choice for electronic components.

Maximum Collector Current (IC): 36 A

With a high maximum collector current, this transistor is capable of handling heavy loads, making it suitable for high-current applications.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and corrosion resistance, ensuring reliable electrical connections over time.

Terminal Position: SINGLE

A single terminal position allows for straightforward placement and soldering in circuit design, contributing to ease of use during assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) HD1760JL attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

800 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

HD1760JL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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