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HD1520FX

STMicroelectronics

HD1520FX by STMicroelectronics

HD1520FX by STMicroelectronics is a powerful NPN BJT designed for amplifying applications. It features a max power dissipation of 64W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,045 parts In-Stock

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4,045

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Vyrian

USA . 3,986 parts In-Stock

1+ parts

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3,986

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Anansix

USA . 763 parts In-Stock

1+ parts

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763

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Cyclops Electronics Ltd

UK . 20 parts In-Stock

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20

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,580 parts In-Stock

1+ parts

$0.609

100+ parts

-

1k+ parts

$0.548

10k+ parts

-

1,580

$0.609

-

$0.548

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MKK Technologies

India . 280 parts In-Stock

1+ parts

$1.145

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-

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280

$1.145

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DigiPath Technology Company

USA . 280 parts In-Stock

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$1.145

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280

$1.145

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Northwest PG Solutions

USA . 158 parts In-Stock

1+ parts

$3.256

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158

$3.256

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AZTECH Wire

Italy . 1,115 parts In-Stock

1+ parts

$12.520

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1,115

$12.520

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Ampacity Inc.

Singapore . 1,204 parts In-Stock

1+ parts

$33.050

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1,204

$33.050

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Component Stockers USA

USA . 658 parts In-Stock

1+ parts

$99.990

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658

$99.990

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A-Z Elektronik GmbH

Germany . 5,649 parts In-Stock

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5,649

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Alle Elektronik GmbH

Germany . 3,766 parts In-Stock

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3,766

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Corphita

USA . 2,016 parts In-Stock

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2,016

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Native Components

USA . 825 parts In-Stock

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$2.871

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825

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$2.871

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Parana Technologies

USA . 760 parts In-Stock

1+ parts

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$0.728

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760

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$0.728

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Overview

Unleash the power of your designs with the HD1520FX from STMicroelectronics—your trusted partner in innovation. This robust NPN BJT transistor excels in amplification applications, delivering exceptional performance and reliability under demanding conditions. With a stellar reputation for quality and cutting-edge technology, STMicroelectronics ensures that the HD1520FX not only meets but exceeds your expectations, empowering your projects with unmatched efficiency and durability. Choose HD1520FX for superior value and peace of mind!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching, making this product versatile in electronic circuits.

Configuration: SINGLE

A single configuration simplifies circuit design while maintaining efficiency, allowing for easy integration into various applications.

Transistor Application: AMPLIFIER

Optimized for amplification, this BJT is ideal for applications requiring signal enhancement, such as audio systems or RF amplifiers.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of board space and ease of placement in circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer robust mechanical stability and are easier to solder, improving reliability in connections.

No. of Terminals: 3

With three terminals, this transistor facilitates straightforward circuit design, providing necessary connections for efficient operation.

Maximum Power Dissipation (Abs): 64 W

A high maximum power dissipation rating ensures that the transistor can handle significant power loads without overheating, enhancing reliability.

Package Style (Meter): FLANGE MOUNT

Flange mount design allows for secure installation on heat sinks or circuit boards, ensuring stability and heat dissipation.

Minimum DC Current Gain (hFE): 5.5

A minimum hFE of 5.5 indicates good amplification capability, which is essential for efficient signal processing in circuits.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures ensures reliability and performance in demanding environments.

Maximum Collector-Emitter Voltage: 700 V

A high maximum collector-emitter voltage allows this transistor to be used in high-voltage applications, expanding its usability.

Transistor Element Material: SILICON

Silicon is a widely used material for transistors due to its good electrical properties and availability, supporting consistent performance.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15 A, this transistor can handle high-current applications, making it suitable for powerful circuits.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring long-term reliability of connections.

Terminal Position: SINGLE

Single terminal position allows for straightforward layout on circuit boards, simplifying the design process.

Case Connection: ISOLATED

An isolated case connection minimizes the risk of unwanted electrical interactions, enhancing the safety and efficiency of the application.

Technical Specifications

Power Bipolar Junction Transistors (BJT) HD1520FX attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

700 V

Configuration:

Minimum DC Current Gain (hFE):

5.5

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

HD1520FX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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