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HD1530JL

STMicroelectronics

HD1530JL by STMicroelectronics

HD1530JL by STMicroelectronics is a powerful NPN BJT designed for amplifying applications. It features a max power dissipation of 200W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,028 parts In-Stock

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6,028

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Digiode

USA . 3,892 parts In-Stock

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3,892

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Anansix

USA . 193 parts In-Stock

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193

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 702 parts In-Stock

1+ parts

$1.145

100+ parts

-

1k+ parts

$1.031

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702

$1.145

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$1.031

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Native Components

USA . 908 parts In-Stock

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$1.952

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908

$1.952

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Northwest PG Solutions

USA . 302 parts In-Stock

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$2.147

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302

$2.147

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MKK Technologies

India . 2,057 parts In-Stock

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$2.154

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2,057

$2.154

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DigiPath Technology Company

USA . 2,057 parts In-Stock

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$2.154

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2,057

$2.154

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AZTECH Wire

Italy . 618 parts In-Stock

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$17.560

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618

$17.560

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QUARKTWIN TECHNOLOGY LTD

USA . 3,959 parts In-Stock

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3,959

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Alle Elektronik GmbH

Germany . 3,615 parts In-Stock

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3,615

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Corphita

USA . 1,319 parts In-Stock

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1,319

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Parana Technologies

USA . 600 parts In-Stock

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$1.370

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600

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$1.370

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Overview

Unlock the potential of your designs with the HD1530JL from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This high-performance NPN power BJT excels in amplification applications, delivering robust performance and reliability for demanding environments. With its durable plastic/epoxy package and impressive power handling capabilities, the HD1530JL ensures efficiency and longevity, making it an ideal choice for industrial and consumer electronics alike. Experience quality you can rely on!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protection against environmental factors, making this BJT suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for efficient switching and amplification, making it ideal for a wide range of electronic circuits.

Configuration: SINGLE

A single configuration simplifies circuit design and layout, offering easy integration into various systems.

Transistor Application: AMPLIFIER

Designed as an amplifier, this BJT provides high performance in signal processing applications, enhancing audio and RF applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space efficiency on PCBs, allowing for more compact designs in electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are ideal for high-power applications, ensuring reliability.

No. of Terminals: 3

With three terminals, this BJT allows for versatile connections, suitable for various circuit configurations.

Maximum Power Dissipation (Abs): 200 W

The high power dissipation capability makes this BJT suitable for demanding applications, ensuring reliable performance under load.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides enhanced heat dissipation and physical stability, ideal for high-power installations.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 indicates satisfactory amplification properties, making it suitable for low-signal applications.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures ensures reliability in extreme conditions, widening the applicability of this transistor.

Maximum Collector-Emitter Voltage: 700 V

High voltage handling allows for usage in high-voltage applications, enhancing versatility in various electronic circuits.

Transistor Element Material: SILICON

Silicon provides excellent electrical properties and thermal stability, making this BJT an effective choice for various applications.

Maximum Collector Current (IC): 26 A

The capacity to handle up to 26 A makes this BJT effective for high-current applications, supporting robust circuit designs.

Terminal Position: SINGLE

A single terminal position streamlines installation and maintenance, making it user-friendly and efficient.

Technical Specifications

Power Bipolar Junction Transistors (BJT) HD1530JL attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

700 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

HD1530JL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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