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HD1530FX

STMicroelectronics

HD1530FX by STMicroelectronics

HD1530FX by STMicroelectronics is a powerful NPN BJT designed for amplifiers, featuring a max power dissipation of 70W and a collector-emitter voltage of 700V. It operates at up to 150 °C with a min DC current gain of 5.5. Ideal for high-performance applications in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,606 parts In-Stock

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6,606

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Anansix

USA . 1,419 parts In-Stock

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1,419

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Digiode

USA . 207 parts In-Stock

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207

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 616 parts In-Stock

1+ parts

$1.209

100+ parts

-

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$1.088

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616

$1.209

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$1.088

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MKK Technologies

India . 1,552 parts In-Stock

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$2.273

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1,552

$2.273

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DigiPath Technology Company

USA . 1,552 parts In-Stock

1+ parts

$2.273

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1,552

$2.273

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Northwest PG Solutions

USA . 395 parts In-Stock

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$2.717

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395

$2.717

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AZTECH Wire

Italy . 587 parts In-Stock

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$20.820

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587

$20.820

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Kepictronics

USA . 12,000 parts In-Stock

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12,000

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Corphita

USA . 4,650 parts In-Stock

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4,650

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Alle Elektronik GmbH

Germany . 3,406 parts In-Stock

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3,406

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Parana Technologies

USA . 402 parts In-Stock

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$1.445

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402

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$1.445

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Native Components

USA . 288 parts In-Stock

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$2.396

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288

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$2.396

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Overview

Unlock unparalleled performance with the HD1530FX from STMicroelectronics, a leader in innovative semiconductor solutions. This NPN power BJT delivers exceptional amplification for diverse applications, ensuring reliable operation even in demanding environments. With robust construction and a high power rating, it offers unmatched durability and efficiency. Trust in STMicroelectronics’ legacy of quality to elevate your projects and achieve superior results!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides a lightweight and durable package, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are ideal for switching and amplification applications, providing a reliable choice for circuits requiring these functionalities.

Configuration: SINGLE

A single configuration simplifies integration into circuits, allowing for ease of use in both DIY and professional designs.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor can enhance signal strength effectively, making it suitable for audio and other signal processing tasks.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space management on circuit boards, facilitating compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and better heat dissipation, making them a preferred choice for high-power applications.

No. of Terminals: 3

Having three terminals simplifies the circuit design and allows for versatile implementation in various configurations.

Maximum Power Dissipation (Abs): 70 W

With a high maximum power dissipation rating, this transistor can handle demanding applications without overheating, ensuring reliability.

Package Style (Meter): FLANGE MOUNT

Flange mount style enhances stability and facilitates secure attachment on PCBs, which is crucial in high-vibration environments.

Minimum DC Current Gain (hFE): 5.5

A minimum DC current gain ensures adequate amplification in applications, making this transistor suitable for various low-signal circuits.

Maximum Operating Temperature: 150 °C

Operating at up to 150 °C allows this transistor to perform in high-temperature environments, enhancing its usability in diverse applications.

Maximum Collector-Emitter Voltage: 700 V

With a maximum collector-emitter voltage of 700 V, this transistor can be used in high-voltage applications, providing versatility.

Transistor Element Material: SILICON

Silicon as the material offers good thermal stability and reliability, making this transistor a cost-effective choice for various electronic circuits.

Maximum Collector Current (IC): 26 A

With a high maximum collector current rating, this transistor can handle substantial loads, making it suitable for power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability and corrosion resistance, ensuring a longer lifespan and better performance in harsh environments.

Terminal Position: SINGLE

Single terminal position simplifies layout design on printed circuit boards, allowing for efficient manufacturing and assembly processes.

Technical Specifications

Power Bipolar Junction Transistors (BJT) HD1530FX attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

700 V

Configuration:

Minimum DC Current Gain (hFE):

5.5

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

HD1530FX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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