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STS05DTP03

STMicroelectronics

STS05DTP03 by STMicroelectronics

STS05DTP03 from STMicroelectronics is a versatile NPN/PNP BJT designed for switching applications. It features a max power dissipation of 2W, supports up to 5A collector current, and operates at temperatures up to 150 °C. Its compact SO package ensures efficient surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 4,350 parts In-Stock

1+ parts

-

100+ parts

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4,350

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-

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Vyrian

USA . 4,144 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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4,144

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Digiode

USA . 3,929 parts In-Stock

1+ parts

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3,929

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Anansix

USA . 2,586 parts In-Stock

1+ parts

-

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2,586

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Semtec, LLC

USA . 80 parts In-Stock

1+ parts

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80

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,286 parts In-Stock

1+ parts

$1.654

100+ parts

-

1k+ parts

$1.489

10k+ parts

-

1,286

$1.654

-

$1.489

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MKK Technologies

India . 1,959 parts In-Stock

1+ parts

$3.111

100+ parts

-

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1,959

$3.111

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DigiPath Technology Company

USA . 1,959 parts In-Stock

1+ parts

$3.111

100+ parts

-

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1,959

$3.111

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AZTECH Wire

Italy . 663 parts In-Stock

1+ parts

$12.390

100+ parts

-

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663

$12.390

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Ampacity Inc.

Singapore . 846 parts In-Stock

1+ parts

$58.050

100+ parts

-

1k+ parts

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10k+ parts

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846

$58.050

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A-Z Elektronik GmbH

Germany . 6,929 parts In-Stock

1+ parts

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100+ parts

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6,929

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Corphita

USA . 3,163 parts In-Stock

1+ parts

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3,163

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Parana Technologies

USA . 1,969 parts In-Stock

1+ parts

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100+ parts

$1.978

1k+ parts

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10k+ parts

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1,969

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$1.978

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Overview

Elevate your designs with the STS05DTP03 from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This versatile NPN and PNP power BJT excels in switching applications, offering robust performance and reliability for your projects. With its compact surface mount package and exceptional thermal management, it ensures efficiency and longevity, making it the perfect choice for automotive, industrial, and consumer electronics. Unlock the potential of your applications with unmatched quality and value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body provides good protection, ensuring durability and reliability in various environments.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP configurations offers versatility, making it suitable for a wide range of applications.

Configuration: SEPARATE, 2 ELEMENTS

The separate 2 elements design allows for flexible circuit integration, enhancing circuit design options.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor provides efficient control in electronic circuits.

Surface Mount: YES

Surface mount capability allows for compact designs and improved performance in automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape facilitates effective heat dissipation, contributing to reliable performance in high-demand applications.

Terminal Form: GULL WING

Gull wing terminals enhance soldering reliability and are preferred for surface mount technology.

No. of Elements: 2

With two elements, it can handle more complex circuits, providing greater design flexibility.

No. of Terminals: 8

Eight terminals allow for multiple connections, accommodating diverse circuit requirements.

Maximum Power Dissipation (Abs): 2 W

A maximum power dissipation of 2W ensures effective thermal management, making it suitable for high-power applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to space-saving designs in modern electronics.

Minimum DC Current Gain (hFE): 80

A minimum hFE of 80 indicates efficient amplification, enhancing overall circuit performance.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C allows for reliable operation in harsh environments.

Maximum Collector-Emitter Voltage: 30 V

A collector-emitter voltage rating of 30V makes this transistor capable of handling many common high-voltage applications.

Transistor Element Material: SILICON

Silicon material ensures good conductivity and performance, suitable for most electronic applications.

Maximum Collector Current (IC): 5 A

The ability to handle up to 5A collector current makes this transistor a strong choice for high-current applications.

Terminal Position: DUAL

Dual terminal positioning enhances layout flexibility, enabling efficient circuit designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STS05DTP03 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G8

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STS05DTP03 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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