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ST2001FX

STMicroelectronics

ST2001FX by STMicroelectronics

ST2001FX by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,982 parts In-Stock

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3,982

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Anansix

USA . 2,206 parts In-Stock

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2,206

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Digiode

USA . 871 parts In-Stock

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871

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 716 parts In-Stock

1+ parts

$1.694

100+ parts

-

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$1.524

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716

$1.694

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$1.524

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MKK Technologies

India . 152 parts In-Stock

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$3.185

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152

$3.185

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DigiPath Technology Company

USA . 152 parts In-Stock

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$3.185

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152

$3.185

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Ampacity Inc.

Singapore . 749 parts In-Stock

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$13.050

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749

$13.050

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AZTECH Wire

Italy . 630 parts In-Stock

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$18.010

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630

$18.010

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Component Stockers USA

USA . 509 parts In-Stock

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$99.990

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509

$99.990

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A-Z Elektronik GmbH

Germany . 5,717 parts In-Stock

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5,717

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Corphita

USA . 4,809 parts In-Stock

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4,809

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Alle Elektronik GmbH

Germany . 3,263 parts In-Stock

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3,263

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QUARKTWIN TECHNOLOGY LTD

USA . 2,799 parts In-Stock

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2,799

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Parana Technologies

USA . 1,189 parts In-Stock

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$2.025

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1,189

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$2.025

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Overview

Elevate your projects with the ST2001FX from STMicroelectronics—a trusted leader in innovative semiconductor solutions. This robust NPN power transistor excels in switching applications, delivering exceptional performance and reliability. Designed for durability with a maximum operating temperature of 150 °C, it seamlessly integrates into various circuits, ensuring efficiency and longevity. Experience superior quality and unrivaled value that empowers your designs to thrive!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy materials enhances durability and reliability, making this transistor suitable for various environments.

Polarity or Channel Type: NPN

The NPN configuration provides efficient switching capability, which is ideal for high-speed applications.

Configuration: SINGLE

A single transistor configuration simplifies circuit design and reduces space requirements.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimal for control circuits and power management.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on PCBs, facilitating compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust physical mounting, ensuring secure connections under various conditions.

No. of Terminals: 3

The three terminals facilitate easier circuit connections and integration into existing designs.

Maximum Power Dissipation (Abs): 55 W

A high power dissipation rating makes this transistor suitable for applications requiring significant power handling without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount style enhances stability and improves heat dissipation, crucial for high-power applications.

Minimum DC Current Gain (hFE): 5

A minimum current gain allows for better amplification in switching applications, ensuring efficient performance.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliable performance in demanding environments.

Maximum Collector-Emitter Voltage: 600 V

A high voltage rating enables use in high-voltage applications, expanding its versatility.

Transistor Element Material: SILICON

Silicon material provides excellent thermal stability and performance, ensuring longevity and reliability.

Maximum Collector Current (IC): 10 A

Ten ampere collector current rating allows for substantial load handling, making it suitable for power-intensive applications.

Terminal Position: SINGLE

Single terminal position maintains simplicity in circuit layout, easing design complexity.

Case Connection: ISOLATED

Isolated case connection enhances safety by minimizing the risk of short circuits in the circuit design.

Peak Reflow Temperature: 245 °C

A high peak reflow temperature indicates compatibility with modern soldering techniques, facilitating easier manufacturing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST2001FX attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ST2001FX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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