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ST2009DHI

STMicroelectronics

ST2009DHI by STMicroelectronics

ST2009DHI by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,619 parts In-Stock

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1,619

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Vyrian

USA . 1,176 parts In-Stock

1+ parts

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1,176

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Digiode

USA . 790 parts In-Stock

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790

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 259 parts In-Stock

1+ parts

$0.443

100+ parts

-

1k+ parts

$0.399

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259

$0.443

-

$0.399

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MKK Technologies

India . 190 parts In-Stock

1+ parts

$0.834

100+ parts

-

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190

$0.834

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DigiPath Technology Company

USA . 190 parts In-Stock

1+ parts

$0.834

100+ parts

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190

$0.834

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Corphita

USA . 4,105 parts In-Stock

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4,105

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Parana Technologies

USA . 1,919 parts In-Stock

1+ parts

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100+ parts

$0.530

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1,919

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$0.530

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Kepictronics

USA . 60 parts In-Stock

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60

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Overview

Unlock the power of reliability with the ST2009DHI from STMicroelectronics, a trusted leader in semiconductor innovation. This robust NPN power transistor excels in switching applications, ensuring efficient performance even under demanding conditions. Designed for durability with a maximum operating temperature of 150 °C and a high power dissipation capability, the ST2009DHI delivers exceptional value, enhancing your projects with seamless integration and long-lasting stability. Experience quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protection against environmental factors, making the transistor reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used for switching and amplification, providing versatility in various power applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

This configuration simplifies circuit design and enhances protection against reverse polarity, increasing the component's reliability.

Transistor Application: SWITCHING

Designed for switching applications, this transistor efficiently handles on/off control, making it ideal for power management in circuits.

Package Shape: RECTANGULAR

The rectangular shape is advantageous for compact designs and helps in space-saving layouts in electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides robust mechanical stability and is suitable for high-power applications, ensuring reliable electrical connections.

No. of Terminals: 3

Three terminals facilitate straightforward connections for a simple circuit layout, making it easier to implement in various designs.

Maximum Power Dissipation (Abs): 55 W

A high maximum power dissipation of 55 W ensures that the transistor can handle substantial power without overheating, enhancing performance.

Package Style (Meter): FLANGE MOUNT

Flange mounting provides secure attachment and efficient heat dissipation, crucial for maintaining performance in high-power applications.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 means this transistor can effectively amplify input signals, enhancing its performance in switching applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C allows this transistor to function in extreme conditions, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 600 V

With a collector-emitter voltage rating of 600 V, this transistor is capable of handling high voltages, making it suitable for various power applications.

Transistor Element Material: SILICON

Silicon materials improve efficiency and performance in transistors, ensuring reliability in various electronic applications.

Maximum Collector Current (IC): 10 A

The capability to handle a maximum collector current of 10 A makes this transistor ideal for high-power applications and demanding circuit designs.

Terminal Position: SINGLE

A single terminal position simplifies the layout of circuits, enhancing design flexibility for engineers.

Case Connection: ISOLATED

Isolated case connections provide protection against unintended connections, reducing the risk of short circuits and enhancing overall safety.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST2009DHI attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ST2009DHI Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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